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dc.creatorSmiljanić, Miloljub
dc.creatorNesic, D.
dc.date.accessioned2019-09-10T15:30:56Z
dc.date.available2019-09-10T15:30:56Z
dc.date.issued1995
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/3085
dc.description.abstractThe work presents an analysis of avalanche photodiode (APD) with spherical p-n junction. The calculation results are given for the dependence of the avalanche multiplication and noise parameters on geometry and on the incident light wavelength. As an example we modeled one structure for Si-APD and one structure for InGaAs/InP-APD. The novel structure has lower or comparable noise factors in comparison with the best of the reach-through APDs and earlier works of these authors on the spherical contact surface APDs. InGaAs/InP-APD are modeled to show the possibility of using the spherical p-n junction for that type of APD.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.rightsrestrictedAccess
dc.titleDependance of avalanche photodiode characteristics on active area geometryen
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractСмиљанић, Милољуб; Несиц, Д.;
dc.rights.holderInstitute of Electrical and Electronics Engineers
dc.citation.volume2
dc.citation.spage685
dc.citation.epage690
dc.description.otherProceedings of the 1995 20th International Conference on Microelectronics. Part 1 (of 2); Nis, Serbia; ; 12 September 1995 through 14 September 1995;en
dc.identifier.doi10.1109/ICMEL.1995.500949
dc.identifier.scopus2-s2.0-0029492582
dc.type.versionpublishedVersion


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