Dependance of avalanche photodiode characteristics on active area geometry

Smiljanić, Miloljub; Nešić, Dušan

doi:10.1109/ICMEL.1995.500949

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1995

Authors

Smiljanić, Miloljub
Nešić, Dušan

Conference object (Published version)

Institute of Electrical and Electronics Engineers

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Abstract

The work presents an analysis of avalanche photodiode (APD) with spherical p-n junction. The calculation results are given for the dependence of the avalanche multiplication and noise parameters on geometry and on the incident light wavelength. As an example we modeled one structure for Si-APD and one structure for InGaAs/InP-APD. The novel structure has lower or comparable noise factors in comparison with the best of the reach-through APDs and earlier works of these authors on the spherical contact surface APDs. InGaAs/InP-APD are modeled to show the possibility of using the spherical p-n junction for that type of APD.

Source:
1995, 2, 685-690

Publisher:

Institute of Electrical and Electronics Engineers (IEEE)

Note:

Proceedings of the 1995 20th International Conference on Microelectronics. Part 1 (of 2); Nis, Serbia; ; 12 September 1995 through 14 September 1995;

DOI: 10.1109/ICMEL.1995.500949

TY  - CONF
AU  - Smiljanić, Miloljub
AU  - Nešić, Dušan
PY  - 1995
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3085
AB  - The work presents an analysis of avalanche photodiode (APD) with spherical p-n junction. The calculation results are given for the dependence of the avalanche multiplication and noise parameters on geometry and on the incident light wavelength. As an example we modeled one structure for Si-APD and one structure for InGaAs/InP-APD. The novel structure has lower or comparable noise factors in comparison with the best of the reach-through APDs and earlier works of these authors on the spherical contact surface APDs. InGaAs/InP-APD are modeled to show the possibility of using the spherical p-n junction for that type of APD.
PB  - Institute of Electrical and Electronics Engineers (IEEE)
T1  - Dependance of avalanche photodiode characteristics on active area geometry
VL  - 2
SP  - 685
EP  - 690
DO  - 10.1109/ICMEL.1995.500949
ER  -

@conference{
author = "Smiljanić, Miloljub and Nešić, Dušan",
year = "1995",
abstract = "The work presents an analysis of avalanche photodiode (APD) with spherical p-n junction. The calculation results are given for the dependence of the avalanche multiplication and noise parameters on geometry and on the incident light wavelength. As an example we modeled one structure for Si-APD and one structure for InGaAs/InP-APD. The novel structure has lower or comparable noise factors in comparison with the best of the reach-through APDs and earlier works of these authors on the spherical contact surface APDs. InGaAs/InP-APD are modeled to show the possibility of using the spherical p-n junction for that type of APD.",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
title = "Dependance of avalanche photodiode characteristics on active area geometry",
volume = "2",
pages = "685-690",
doi = "10.1109/ICMEL.1995.500949"
}

Smiljanić, M.,& Nešić, D.. (1995). Dependance of avalanche photodiode characteristics on active area geometry. 
Institute of Electrical and Electronics Engineers (IEEE)., 2, 685-690.
https://doi.org/10.1109/ICMEL.1995.500949

Smiljanić M, Nešić D. Dependance of avalanche photodiode characteristics on active area geometry. 1995;2:685-690.
doi:10.1109/ICMEL.1995.500949 .

Smiljanić, Miloljub, Nešić, Dušan, "Dependance of avalanche photodiode characteristics on active area geometry", 2 (1995):685-690,
https://doi.org/10.1109/ICMEL.1995.500949 . .