The work presents an analysis of an avalanche photodiode (APD) with a spherical contact surface. We calculated the dependence of the avalanche multiplication and noise parameters on the incident light wavelength. Multiplication and noise parameters are compared with the literature data for ordinary APDs at six wavelengths (500, 600, 700, 800, 850 and 900 nm). For shorter wavelengths (800 nm and below), the noise factors of the presented structure are lower or comparable with those of the best of the reach-through APD. Thus we propose using the new avalanche photodiode structure as a detector for visible light.
Source:
Semiconductor Science and Technology, 1997, 12, 8, 1003-1009
TY - JOUR
AU - Nešić, Dušan
AU - Smiljanić, Miloljub
PY - 1997
UR - https://cer.ihtm.bg.ac.rs/handle/123456789/3084
AB - The work presents an analysis of an avalanche photodiode (APD) with a spherical contact surface. We calculated the dependence of the avalanche multiplication and noise parameters on the incident light wavelength. Multiplication and noise parameters are compared with the literature data for ordinary APDs at six wavelengths (500, 600, 700, 800, 850 and 900 nm). For shorter wavelengths (800 nm and below), the noise factors of the presented structure are lower or comparable with those of the best of the reach-through APD. Thus we propose using the new avalanche photodiode structure as a detector for visible light.
PB - IOP Publishing
T2 - Semiconductor Science and Technology
T1 - Characteristics of an avalanche photodiode with a spherical contact surface
VL - 12
IS - 8
SP - 1003
EP - 1009
DO - 10.1088/0268-1242/12/8/013
ER -
@article{
author = "Nešić, Dušan and Smiljanić, Miloljub",
year = "1997",
abstract = "The work presents an analysis of an avalanche photodiode (APD) with a spherical contact surface. We calculated the dependence of the avalanche multiplication and noise parameters on the incident light wavelength. Multiplication and noise parameters are compared with the literature data for ordinary APDs at six wavelengths (500, 600, 700, 800, 850 and 900 nm). For shorter wavelengths (800 nm and below), the noise factors of the presented structure are lower or comparable with those of the best of the reach-through APD. Thus we propose using the new avalanche photodiode structure as a detector for visible light.",
publisher = "IOP Publishing",
journal = "Semiconductor Science and Technology",
title = "Characteristics of an avalanche photodiode with a spherical contact surface",
volume = "12",
number = "8",
pages = "1003-1009",
doi = "10.1088/0268-1242/12/8/013"
}
Nešić, D.,& Smiljanić, M.. (1997). Characteristics of an avalanche photodiode with a spherical contact surface. in Semiconductor Science and Technology
IOP Publishing., 12(8), 1003-1009.
https://doi.org/10.1088/0268-1242/12/8/013
Nešić D, Smiljanić M. Characteristics of an avalanche photodiode with a spherical contact surface. in Semiconductor Science and Technology. 1997;12(8):1003-1009.
doi:10.1088/0268-1242/12/8/013 .
Nešić, Dušan, Smiljanić, Miloljub, "Characteristics of an avalanche photodiode with a spherical contact surface" in Semiconductor Science and Technology, 12, no. 8 (1997):1003-1009,
https://doi.org/10.1088/0268-1242/12/8/013 . .
, 
