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Photopyropiezoelectric elastic bending method

Authorized Users Only
2003
Authors
Todorović, D. M.
Nikolić, P. M.
Bojičić, A.
Smiljanić, Miloljub
Vasiljević-Radović, Dana
Radulović, Katarina
Conference object (Published version)
,
American Institute of Physics
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Abstract
A method of investigation of semiconductors and metal–semiconductor structures based on two techniques: The elastic bending technique and pyropiezoelectric (PPE) technique was presented. The method was demonstrated on a metal–semiconductor–metal (MSM) structure, which is attached to a PPE detector. Two different ac voltages can be measured: One on the electrodes of MSM structure—the ac-photovoltage, and another on the electrodes of the PPE detector—the PPE voltage. The ac photovoltage is a consequence of the photogenerated plasma processes in the sample (MSM structure). Photogenerated plasma waves in a semiconductor are followed by the thermal and elastic waves (the elastic bending). Then, the pyroelectric voltage is a consequence of the thermal processes and the piezoelectric voltage is a consequence of elastic bending in the sample-PPE detector system. A theoretical model for a metal–semiconductor–metal-pyro(piezo)electric system is given including the space-charge regions and electr...onic states on the semiconductor surfaces, thermodiffusion, thermoelastic, and electronic deformation effects in a semiconductor. The photoelectric and pyropiezoelectric effects are investigated by analyzing the ac voltages as a function of the modulation frequency of excitation beam.

Keywords:
Thermal diffusivity / Photoacoustic effect / Thermal effusivity
Source:
Review of Scientific Instruments, 2003, 74, 1, 635-638
Publisher:
  • AIP Publishing
Projects:
  • Ministry of Sciences, Technologies and Development, Republic of Serbia Grant No. I.T.1.04.0062.B
Note:
  • Conference: 12th International Conference on Photoacoustic and Photothermal Phenomena (12 ICPPP) Location: Toronto, Canada; Date: JUN 24-27, 2002

DOI: 10.1063/1.1520317

ISSN: 0034-6748; 1089-7623

WoS: 000180451900101

Scopus: 2-s2.0-0037283202
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URI
http://cer.ihtm.bg.ac.rs/handle/123456789/3082
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