Photopyropiezoelectric elastic bending method
Authorized Users Only
2003
Authors
Todorović, D. M.Nikolić, P. M.
Bojičić, A.
Smiljanić, Miloljub
Vasiljević-Radović, Dana

Radulović, Katarina

Conference object (Published version)

American Institute of Physics
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Show full item recordAbstract
A method of investigation of semiconductors and metal–semiconductor structures based on two techniques: The elastic bending technique and pyropiezoelectric (PPE) technique was presented. The method was demonstrated on a metal–semiconductor–metal (MSM) structure, which is attached to a PPE detector. Two different ac voltages can be measured: One on the electrodes of MSM structure—the ac-photovoltage, and another on the electrodes of the PPE detector—the PPE voltage. The ac photovoltage is a consequence of the photogenerated plasma processes in the sample (MSM structure). Photogenerated plasma waves in a semiconductor are followed by the thermal and elastic waves (the elastic bending). Then, the pyroelectric voltage is a consequence of the thermal processes and the piezoelectric voltage is a consequence of elastic bending in the sample-PPE detector system. A theoretical model for a metal–semiconductor–metal-pyro(piezo)electric system is given including the space-charge regions and electr...onic states on the semiconductor surfaces, thermodiffusion, thermoelastic, and electronic deformation effects in a semiconductor. The photoelectric and pyropiezoelectric effects are investigated by analyzing the ac voltages as a function of the modulation frequency of excitation beam.
Keywords:
Thermal diffusivity / Photoacoustic effect / Thermal effusivitySource:
Review of Scientific Instruments, 2003, 74, 1, 635-638Publisher:
- AIP Publishing
Funding / projects:
- Ministry of Sciences, Technologies and Development, Republic of Serbia Grant No. I.T.1.04.0062.B
Note:
- Conference: 12th International Conference on Photoacoustic and Photothermal Phenomena (12 ICPPP) Location: Toronto, Canada; Date: JUN 24-27, 2002
DOI: 10.1063/1.1520317
ISSN: 0034-6748; 1089-7623
WoS: 000180451900101
Scopus: 2-s2.0-0037283202
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Institution/Community
IHTMTY - CONF AU - Todorović, D. M. AU - Nikolić, P. M. AU - Bojičić, A. AU - Smiljanić, Miloljub AU - Vasiljević-Radović, Dana AU - Radulović, Katarina PY - 2003 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/3082 AB - A method of investigation of semiconductors and metal–semiconductor structures based on two techniques: The elastic bending technique and pyropiezoelectric (PPE) technique was presented. The method was demonstrated on a metal–semiconductor–metal (MSM) structure, which is attached to a PPE detector. Two different ac voltages can be measured: One on the electrodes of MSM structure—the ac-photovoltage, and another on the electrodes of the PPE detector—the PPE voltage. The ac photovoltage is a consequence of the photogenerated plasma processes in the sample (MSM structure). Photogenerated plasma waves in a semiconductor are followed by the thermal and elastic waves (the elastic bending). Then, the pyroelectric voltage is a consequence of the thermal processes and the piezoelectric voltage is a consequence of elastic bending in the sample-PPE detector system. A theoretical model for a metal–semiconductor–metal-pyro(piezo)electric system is given including the space-charge regions and electronic states on the semiconductor surfaces, thermodiffusion, thermoelastic, and electronic deformation effects in a semiconductor. The photoelectric and pyropiezoelectric effects are investigated by analyzing the ac voltages as a function of the modulation frequency of excitation beam. PB - AIP Publishing C3 - Review of Scientific Instruments T1 - Photopyropiezoelectric elastic bending method VL - 74 IS - 1 SP - 635 EP - 638 DO - 10.1063/1.1520317 ER -
@conference{ author = "Todorović, D. M. and Nikolić, P. M. and Bojičić, A. and Smiljanić, Miloljub and Vasiljević-Radović, Dana and Radulović, Katarina", year = "2003", abstract = "A method of investigation of semiconductors and metal–semiconductor structures based on two techniques: The elastic bending technique and pyropiezoelectric (PPE) technique was presented. The method was demonstrated on a metal–semiconductor–metal (MSM) structure, which is attached to a PPE detector. Two different ac voltages can be measured: One on the electrodes of MSM structure—the ac-photovoltage, and another on the electrodes of the PPE detector—the PPE voltage. The ac photovoltage is a consequence of the photogenerated plasma processes in the sample (MSM structure). Photogenerated plasma waves in a semiconductor are followed by the thermal and elastic waves (the elastic bending). Then, the pyroelectric voltage is a consequence of the thermal processes and the piezoelectric voltage is a consequence of elastic bending in the sample-PPE detector system. A theoretical model for a metal–semiconductor–metal-pyro(piezo)electric system is given including the space-charge regions and electronic states on the semiconductor surfaces, thermodiffusion, thermoelastic, and electronic deformation effects in a semiconductor. The photoelectric and pyropiezoelectric effects are investigated by analyzing the ac voltages as a function of the modulation frequency of excitation beam.", publisher = "AIP Publishing", journal = "Review of Scientific Instruments", title = "Photopyropiezoelectric elastic bending method", volume = "74", number = "1", pages = "635-638", doi = "10.1063/1.1520317" }
Todorović, D. M., Nikolić, P. M., Bojičić, A., Smiljanić, M., Vasiljević-Radović, D.,& Radulović, K.. (2003). Photopyropiezoelectric elastic bending method. in Review of Scientific Instruments AIP Publishing., 74(1), 635-638. https://doi.org/10.1063/1.1520317
Todorović DM, Nikolić PM, Bojičić A, Smiljanić M, Vasiljević-Radović D, Radulović K. Photopyropiezoelectric elastic bending method. in Review of Scientific Instruments. 2003;74(1):635-638. doi:10.1063/1.1520317 .
Todorović, D. M., Nikolić, P. M., Bojičić, A., Smiljanić, Miloljub, Vasiljević-Radović, Dana, Radulović, Katarina, "Photopyropiezoelectric elastic bending method" in Review of Scientific Instruments, 74, no. 1 (2003):635-638, https://doi.org/10.1063/1.1520317 . .