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dc.creatorTodorović, D. M.
dc.creatorJović, Vesna
dc.creatorSmiljanić, Miloljub
dc.date.accessioned2019-09-10T15:02:32Z
dc.date.available2019-09-10T15:02:32Z
dc.date.issued2005
dc.identifier.issn1155-4339
dc.identifier.urihttps://cer.ihtm.bg.ac.rs/handle/123456789/3081
dc.description.abstractThe interface states in SiO2 - Si system was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the wavelength of excitation optical beam. In the energy range above the 1.11 eV, the spectral characteristic has a typical form for optical interference. The phase PA spectra of Si wafer and SiO2/Si structure are the same in the energy range above the energy gap of Si. In the energy range below the energy gap of Si, the PA spectra is the consequence of the carrier trapping states formed on dielectric-semiconductor interface.en
dc.publisherEDP Sciences
dc.relation“Microsystems and Nanosystems Technologies for Sensors and Optoelectronics”, supported by grants from the Ministry of Sciences, Technologies and Development, Republic of Serbia, Grant No. I.T.1.04.0062.B.
dc.rightsrestrictedAccess
dc.sourceJournal de Physique IV (Proceedings)
dc.subjectThermal effusivity
dc.subjectPhotoacoustic effect
dc.subjectThermal diffusifity
dc.titleInvestigation of the interface states in the SiO2– Si system by photoacoustic methoden
dc.typeconferenceObjecten
dc.rights.licenseARR
dcterms.abstractСмиљанић, Милољуб; Јовић, В.; Тодоровић, Д. М.;
dc.rights.holderEDP Sciences 2005
dc.citation.volume125
dc.citation.spage455
dc.citation.epage457
dc.citation.rankM23
dc.description.otherConference: 13th International Conference on Photoacoustic and Photothermal Phenomena (ICPPP) Location: Rio de Janeiro, Brazil Date: JUL 05-08, 2004
dc.identifier.doi10.1051/jp4:2005125107
dc.identifier.scopus2-s2.0-33645052755
dc.identifier.wos000230014700108
dc.type.versionpublishedVersion


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Приказ основних података о документу