Investigation of the interface states in the SiO2– Si system by photoacoustic method
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EDP Sciences 2005
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The interface states in SiO2 - Si system was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the wavelength of excitation optical beam. In the energy range above the 1.11 eV, the spectral characteristic has a typical form for optical interference. The phase PA spectra of Si wafer and SiO2/Si structure are the same in the energy range above the energy gap of Si. In the energy range below the energy gap of Si, the PA spectra is the consequence of the carrier trapping states formed on dielectric-semiconductor interface.
Keywords:Thermal effusivity / Photoacoustic effect / Thermal diffusifity
Source:Journal de Physique IV (Proceedings), 2005, 125, 455-457
- EDP Sciences
- “Microsystems and Nanosystems Technologies for Sensors and Optoelectronics”, supported by grants from the Ministry of Sciences, Technologies and Development, Republic of Serbia, Grant No. I.T.1.04.0062.B.
- Conference: 13th International Conference on Photoacoustic and Photothermal Phenomena (ICPPP) Location: Rio de Janeiro, Brazil Date: JUL 05-08, 2004