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dc.creatorTodorović, D. M.
dc.creatorSmiljanić, Miloljub
dc.creatorSarajlić, Milija
dc.creatorVasiljević-Radović, Dana
dc.creatorRanđelović, Danijela
dc.date.accessioned2019-09-10T14:50:06Z
dc.date.available2019-09-10T14:50:06Z
dc.date.issued2005
dc.identifier.issn1155-4339
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/3080
dc.description.abstractThe effects of Ar plasma treatment on the Si surface were investigated by photoacoustic spectroscopy and atomic force microscopy. We studied the surface structure as a function of plasma experimental parameters to correlate the plasma-surface reaction with surface roughness, surface defects and thermal and electronic transport characteristics. The surface of the Si sample (p-type, 10 k$\Omega$cm, 420 $\mu$m) was treated with Ar plasma from 2 min to 80 min. Amplitude and phase PA spectra were measured in the energy range from 0.75 to 1.55 eV. The amplitude ratio and phase difference of the photoacoustic signals for Si samples Ar plasma etched and incoming Si samples indicate the existence of two surface energy states (the generation-recombination centers) at 0,81 and 0,99 eV.
dc.publisherEDP Sciences
dc.rightsrestrictedAccess
dc.sourceJournal de Physique IV (Proceedings)
dc.titleInvestigation of the effects of Ar plasma etching in Si surface by photoacoustic method
dc.typeconferenceObjecten
dc.rights.licenseARR
dcterms.abstractСмиљанић, Милољуб; Сарајлић, Милија; Васиљевић-Радовић, Дана; Тодоровић, Д. М.; Рандјеловић, Д.;
dc.rights.holderEDP Sciences 2005
dc.citation.volume125
dc.citation.spage451
dc.citation.epage453
dc.citation.rankM23
dc.description.other13th International Conference on Photoacoustic and Photothermal Phenomena (ICPPP), Rio de Janeiro, Brazil; Date: JUL 05-08, 2004
dc.identifier.doi10.1051/jp4:2005125106
dc.identifier.scopus2-s2.0-33645092960
dc.identifier.wos000230014700107
dc.type.versionpublishedVersion


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