The effects of Ar plasma treatment on the Si surface were investigated by photoacoustic spectroscopy and atomic force microscopy. We studied the surface structure as a function of plasma experimental parameters to correlate the plasma-surface reaction with surface roughness, surface defects and thermal and electronic transport characteristics. The surface of the Si sample (p-type, 10 k$\Omega$cm, 420 $\mu$m) was treated with Ar plasma from 2 min to 80 min. Amplitude and phase PA spectra were measured in the energy range from 0.75 to 1.55 eV. The amplitude ratio and phase difference of the photoacoustic signals for Si samples Ar plasma etched and incoming Si samples indicate the existence of two surface energy states (the generation-recombination centers) at 0,81 and 0,99 eV.
Source:
Journal de Physique IV (Proceedings), 2005, 125, 451-453
Publisher:
EDP Sciences
Note:
13th International Conference on Photoacoustic and Photothermal Phenomena (ICPPP), Rio de Janeiro, Brazil; Date: JUL 05-08, 2004
TY - CONF
AU - Todorović, D. M.
AU - Smiljanić, Miloljub
AU - Sarajlić, Milija
AU - Vasiljević-Radović, Dana
AU - Randjelović, Danijela
PY - 2005
UR - https://cer.ihtm.bg.ac.rs/handle/123456789/3080
AB - The effects of Ar plasma treatment on the Si surface were investigated by photoacoustic spectroscopy and atomic force microscopy. We studied the surface structure as a function of plasma experimental parameters to correlate the plasma-surface reaction with surface roughness, surface defects and thermal and electronic transport characteristics. The surface of the Si sample (p-type, 10 k$\Omega$cm, 420 $\mu$m) was treated with Ar plasma from 2 min to 80 min. Amplitude and phase PA spectra were measured in the energy range from 0.75 to 1.55 eV. The amplitude ratio and phase difference of the photoacoustic signals for Si samples Ar plasma etched and incoming Si samples indicate the existence of two surface energy states (the generation-recombination centers) at 0,81 and 0,99 eV.
PB - EDP Sciences
C3 - Journal de Physique IV (Proceedings)
T1 - Investigation of the effects of Ar plasma etching in Si surface by photoacoustic method
VL - 125
SP - 451
EP - 453
DO - 10.1051/jp4:2005125106
ER -
@conference{
author = "Todorović, D. M. and Smiljanić, Miloljub and Sarajlić, Milija and Vasiljević-Radović, Dana and Randjelović, Danijela",
year = "2005",
abstract = "The effects of Ar plasma treatment on the Si surface were investigated by photoacoustic spectroscopy and atomic force microscopy. We studied the surface structure as a function of plasma experimental parameters to correlate the plasma-surface reaction with surface roughness, surface defects and thermal and electronic transport characteristics. The surface of the Si sample (p-type, 10 k$\Omega$cm, 420 $\mu$m) was treated with Ar plasma from 2 min to 80 min. Amplitude and phase PA spectra were measured in the energy range from 0.75 to 1.55 eV. The amplitude ratio and phase difference of the photoacoustic signals for Si samples Ar plasma etched and incoming Si samples indicate the existence of two surface energy states (the generation-recombination centers) at 0,81 and 0,99 eV.",
publisher = "EDP Sciences",
journal = "Journal de Physique IV (Proceedings)",
title = "Investigation of the effects of Ar plasma etching in Si surface by photoacoustic method",
volume = "125",
pages = "451-453",
doi = "10.1051/jp4:2005125106"
}
Todorović, D. M., Smiljanić, M., Sarajlić, M., Vasiljević-Radović, D.,& Randjelović, D.. (2005). Investigation of the effects of Ar plasma etching in Si surface by photoacoustic method. in Journal de Physique IV (Proceedings)
EDP Sciences., 125, 451-453.
https://doi.org/10.1051/jp4:2005125106
Todorović DM, Smiljanić M, Sarajlić M, Vasiljević-Radović D, Randjelović D. Investigation of the effects of Ar plasma etching in Si surface by photoacoustic method. in Journal de Physique IV (Proceedings). 2005;125:451-453.
doi:10.1051/jp4:2005125106 .
Todorović, D. M., Smiljanić, Miloljub, Sarajlić, Milija, Vasiljević-Radović, Dana, Randjelović, Danijela, "Investigation of the effects of Ar plasma etching in Si surface by photoacoustic method" in Journal de Physique IV (Proceedings), 125 (2005):451-453,
https://doi.org/10.1051/jp4:2005125106 . .
, 
