Investigation of the effects of Ar plasma etching in Si surface by photoacoustic method
Authorized Users Only
2005
Authors
Todorović, D. M.Smiljanić, Miloljub
Sarajlić, Milija

Vasiljević-Radović, Dana

Randjelović, Danijela

Conference object (Published version)

EDP Sciences 2005
Metadata
Show full item recordAbstract
The effects of Ar plasma treatment on the Si surface were investigated by photoacoustic spectroscopy and atomic force microscopy. We studied the surface structure as a function of plasma experimental parameters to correlate the plasma-surface reaction with surface roughness, surface defects and thermal and electronic transport characteristics. The surface of the Si sample (p-type, 10 k$\Omega$cm, 420 $\mu$m) was treated with Ar plasma from 2 min to 80 min. Amplitude and phase PA spectra were measured in the energy range from 0.75 to 1.55 eV. The amplitude ratio and phase difference of the photoacoustic signals for Si samples Ar plasma etched and incoming Si samples indicate the existence of two surface energy states (the generation-recombination centers) at 0,81 and 0,99 eV.
Source:
Journal de Physique IV (Proceedings), 2005, 125, 451-453Publisher:
- EDP Sciences
Note:
- 13th International Conference on Photoacoustic and Photothermal Phenomena (ICPPP), Rio de Janeiro, Brazil; Date: JUL 05-08, 2004
DOI: 10.1051/jp4:2005125106
ISSN: 1155-4339
WoS: 000230014700107
Scopus: 2-s2.0-33645092960
Collections
Institution/Community
IHTMTY - CONF AU - Todorović, D. M. AU - Smiljanić, Miloljub AU - Sarajlić, Milija AU - Vasiljević-Radović, Dana AU - Randjelović, Danijela PY - 2005 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/3080 AB - The effects of Ar plasma treatment on the Si surface were investigated by photoacoustic spectroscopy and atomic force microscopy. We studied the surface structure as a function of plasma experimental parameters to correlate the plasma-surface reaction with surface roughness, surface defects and thermal and electronic transport characteristics. The surface of the Si sample (p-type, 10 k$\Omega$cm, 420 $\mu$m) was treated with Ar plasma from 2 min to 80 min. Amplitude and phase PA spectra were measured in the energy range from 0.75 to 1.55 eV. The amplitude ratio and phase difference of the photoacoustic signals for Si samples Ar plasma etched and incoming Si samples indicate the existence of two surface energy states (the generation-recombination centers) at 0,81 and 0,99 eV. PB - EDP Sciences C3 - Journal de Physique IV (Proceedings) T1 - Investigation of the effects of Ar plasma etching in Si surface by photoacoustic method VL - 125 SP - 451 EP - 453 DO - 10.1051/jp4:2005125106 ER -
@conference{ author = "Todorović, D. M. and Smiljanić, Miloljub and Sarajlić, Milija and Vasiljević-Radović, Dana and Randjelović, Danijela", year = "2005", abstract = "The effects of Ar plasma treatment on the Si surface were investigated by photoacoustic spectroscopy and atomic force microscopy. We studied the surface structure as a function of plasma experimental parameters to correlate the plasma-surface reaction with surface roughness, surface defects and thermal and electronic transport characteristics. The surface of the Si sample (p-type, 10 k$\Omega$cm, 420 $\mu$m) was treated with Ar plasma from 2 min to 80 min. Amplitude and phase PA spectra were measured in the energy range from 0.75 to 1.55 eV. The amplitude ratio and phase difference of the photoacoustic signals for Si samples Ar plasma etched and incoming Si samples indicate the existence of two surface energy states (the generation-recombination centers) at 0,81 and 0,99 eV.", publisher = "EDP Sciences", journal = "Journal de Physique IV (Proceedings)", title = "Investigation of the effects of Ar plasma etching in Si surface by photoacoustic method", volume = "125", pages = "451-453", doi = "10.1051/jp4:2005125106" }
Todorović, D. M., Smiljanić, M., Sarajlić, M., Vasiljević-Radović, D.,& Randjelović, D.. (2005). Investigation of the effects of Ar plasma etching in Si surface by photoacoustic method. in Journal de Physique IV (Proceedings) EDP Sciences., 125, 451-453. https://doi.org/10.1051/jp4:2005125106
Todorović DM, Smiljanić M, Sarajlić M, Vasiljević-Radović D, Randjelović D. Investigation of the effects of Ar plasma etching in Si surface by photoacoustic method. in Journal de Physique IV (Proceedings). 2005;125:451-453. doi:10.1051/jp4:2005125106 .
Todorović, D. M., Smiljanić, Miloljub, Sarajlić, Milija, Vasiljević-Radović, Dana, Randjelović, Danijela, "Investigation of the effects of Ar plasma etching in Si surface by photoacoustic method" in Journal de Physique IV (Proceedings), 125 (2005):451-453, https://doi.org/10.1051/jp4:2005125106 . .