Приказ основних података о документу

dc.creatorĐurić, Zoran G.
dc.creatorSmiljanić, Miloljub
dc.creatorRadjenović, Branislav
dc.date.accessioned2019-09-10T14:20:11Z
dc.date.available2019-09-10T14:20:11Z
dc.date.issued1984
dc.identifier.issn0038-1101
dc.identifier.urihttps://cer.ihtm.bg.ac.rs/handle/123456789/3078
dc.description.abstractA method for calculation the impulse response of a depletion layer of a semiconductor device based on Ramo's theorem is described. Using this method the impulse response of a reach-through avalanche photodiode is derived.en
dc.publisherElsevieren
dc.rightsrestrictedAccess
dc.sourceSolid-State Electronicsen
dc.titleThe application of Ramo's theorem to the impulse response calculation of a reach-through avalanche photodiodeen
dc.typearticleen
dc.rights.licenseARR
dcterms.abstractСмиљанић, Милољуб; Дјурић, З.; Радјеновић, Б.;
dc.rights.holderElsevier
dc.citation.volume27
dc.citation.issue10
dc.citation.spage833
dc.citation.epage835
dc.identifier.doi10.1016/0038-1101(84)90002-9
dc.identifier.scopus2-s2.0-0021503913
dc.type.versionpublishedVersion


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Приказ основних података о документу