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dc.creatorĐurić, Zoran G.
dc.creatorSmiljanić, Miloljub
dc.date.accessioned2019-09-10T14:08:10Z
dc.date.available2019-09-10T14:08:10Z
dc.date.issued1975
dc.identifier.issn00381101
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/3076
dc.description.abstractThe static characteristics (potential and electric field distributions) of sandwich structures of a metal 1-insulator 1-nondegenerated semiconductor-insulator 2-metal 2 (M1I1S I2M2)-type are analyzed. A theory is given with help of which the semiconductor surface potentials ψ1 and ψ2 as a function of applied voltage, type and thickness of insulator and semiconductor layers, metal-semiconductor work function difference and effective density of surface charges, can be found. Numerical calculations and diagrams with corresponding approximated analytical expressions are given for the case of a symmetrical MISIM structure with intrinsic semiconductor.en
dc.publisherElsevier BVen
dc.relationRepublic Counsil of Scientific Research of S.R. Serbia, (Under Contracts No. 620/13).
dc.rightsrestrictedAccess
dc.sourceSolid-State Electronicsen
dc.titleStatic characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributionsen
dc.typearticleen
dc.rights.licenseARR
dcterms.abstractДјурић, З.; Смиљанић, Милољуб;
dc.rights.holderElsevier
dc.citation.volume18
dc.citation.issue10
dc.citation.spage817
dc.citation.epage825
dc.identifier.doi10.1016/0038-1101(75)90001-5
dc.identifier.scopus2-s2.0-0016563542
dc.type.versionpublishedVersion


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