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Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions
dc.creator | Đurić, Zoran G. | |
dc.creator | Smiljanić, Miloljub | |
dc.date.accessioned | 2019-09-10T14:08:10Z | |
dc.date.available | 2019-09-10T14:08:10Z | |
dc.date.issued | 1975 | |
dc.identifier.issn | 00381101 | |
dc.identifier.uri | https://cer.ihtm.bg.ac.rs/handle/123456789/3076 | |
dc.description.abstract | The static characteristics (potential and electric field distributions) of sandwich structures of a metal 1-insulator 1-nondegenerated semiconductor-insulator 2-metal 2 (M1I1S I2M2)-type are analyzed. A theory is given with help of which the semiconductor surface potentials ψ1 and ψ2 as a function of applied voltage, type and thickness of insulator and semiconductor layers, metal-semiconductor work function difference and effective density of surface charges, can be found. Numerical calculations and diagrams with corresponding approximated analytical expressions are given for the case of a symmetrical MISIM structure with intrinsic semiconductor. | en |
dc.publisher | Elsevier | en |
dc.relation | Republic Counsil of Scientific Research of S.R. Serbia, (Under Contracts No. 620/13). | |
dc.rights | restrictedAccess | |
dc.source | Solid-State Electronics | en |
dc.title | Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions | en |
dc.type | article | en |
dc.rights.license | ARR | |
dcterms.abstract | Дјурић, З.; Смиљанић, Милољуб; | |
dc.rights.holder | Elsevier | |
dc.citation.volume | 18 | |
dc.citation.issue | 10 | |
dc.citation.spage | 817 | |
dc.citation.epage | 825 | |
dc.identifier.doi | 10.1016/0038-1101(75)90001-5 | |
dc.identifier.scopus | 2-s2.0-0016563542 | |
dc.type.version | publishedVersion |