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dc.creatorĐurić, Zoran G.
dc.creatorSmiljanić, Miloljub
dc.creatorTjapkin, D.
dc.date.accessioned2019-09-10T14:02:23Z
dc.date.available2019-09-10T14:02:23Z
dc.date.issued1975
dc.identifier.issn00381101
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/3075
dc.description.abstractIt is shown that the reciprocal value of low frequency capacitance of a MISIM structure can be represented by a sum of reciprocal values of insulator layer and surface space charge capacitances and an “interaction” term which is a consequence of the finiteness of the semiconductor layer. General formulae are derived for the low frequency capacitance of a MISIM structure with nondegenerate semiconductor. Analytical and numerical calculations are given for a MISIM structure with intrinsic semiconductor layer.en
dc.publisherElsevier BVen
dc.relationRepublic Counsil of Scientific Research of S.R. Serbia, (Under Contracts No. 620/13).
dc.rightsrestrictedAccess
dc.sourceSolid-State Electronicsen
dc.titleStatic characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitanceen
dc.typearticleen
dc.rights.licenseARR
dcterms.abstractТјапкин, Д.; Смиљанић, Милољуб; Дјурић, З.;
dc.rights.holderElsevier
dc.citation.volume18
dc.citation.issue10
dc.citation.spage827
dc.citation.epage831
dc.identifier.doi10.1016/0038-1101(75)90002-7
dc.identifier.scopus2-s2.0-0016564891
dc.type.versionpublishedVersion


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