Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance
Samo za registrovane korisnike
1975
Članak u časopisu (Objavljena verzija)
,
Elsevier
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
It is shown that the reciprocal value of low frequency capacitance of a MISIM structure can be represented by a sum of reciprocal values of insulator layer and surface space charge capacitances and an “interaction” term which is a consequence of the finiteness of the semiconductor layer. General formulae are derived for the low frequency capacitance of a MISIM structure with nondegenerate semiconductor. Analytical and numerical calculations are given for a MISIM structure with intrinsic semiconductor layer.
Izvor:
Solid-State Electronics, 1975, 18, 10, 827-831Izdavač:
- Elsevier
Finansiranje / projekti:
- Republic Counsil of Scientific Research of S.R. Serbia, (Under Contracts No. 620/13).
Institucija/grupa
IHTMTY - JOUR AU - Đurić, Zoran G. AU - Smiljanić, Miloljub AU - Tjapkin, D. PY - 1975 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/3075 AB - It is shown that the reciprocal value of low frequency capacitance of a MISIM structure can be represented by a sum of reciprocal values of insulator layer and surface space charge capacitances and an “interaction” term which is a consequence of the finiteness of the semiconductor layer. General formulae are derived for the low frequency capacitance of a MISIM structure with nondegenerate semiconductor. Analytical and numerical calculations are given for a MISIM structure with intrinsic semiconductor layer. PB - Elsevier T2 - Solid-State Electronics T1 - Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance VL - 18 IS - 10 SP - 827 EP - 831 DO - 10.1016/0038-1101(75)90002-7 ER -
@article{ author = "Đurić, Zoran G. and Smiljanić, Miloljub and Tjapkin, D.", year = "1975", abstract = "It is shown that the reciprocal value of low frequency capacitance of a MISIM structure can be represented by a sum of reciprocal values of insulator layer and surface space charge capacitances and an “interaction” term which is a consequence of the finiteness of the semiconductor layer. General formulae are derived for the low frequency capacitance of a MISIM structure with nondegenerate semiconductor. Analytical and numerical calculations are given for a MISIM structure with intrinsic semiconductor layer.", publisher = "Elsevier", journal = "Solid-State Electronics", title = "Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance", volume = "18", number = "10", pages = "827-831", doi = "10.1016/0038-1101(75)90002-7" }
Đurić, Z. G., Smiljanić, M.,& Tjapkin, D.. (1975). Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance. in Solid-State Electronics Elsevier., 18(10), 827-831. https://doi.org/10.1016/0038-1101(75)90002-7
Đurić ZG, Smiljanić M, Tjapkin D. Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance. in Solid-State Electronics. 1975;18(10):827-831. doi:10.1016/0038-1101(75)90002-7 .
Đurić, Zoran G., Smiljanić, Miloljub, Tjapkin, D., "Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance" in Solid-State Electronics, 18, no. 10 (1975):827-831, https://doi.org/10.1016/0038-1101(75)90002-7 . .