A numerical model of a photodiode with etched spherical pits on an active surface has been developed. Several geometrical parameters (radius of curvature, depth and arrangement of spherical pits, sample thickness and area, and thickness of the anti-reflection layer) were varied and their influence on the quantum efficiency of the structure was considered. It has been shown that the photodiode quantum efficiency can be optimized by the proper choice of these parameters. From the technological point of view, it is very important that the optimized quantum efficiency can be achieved without a strict definition of the device geometry.
TY - JOUR
AU - Vujanić, Aleksandar
AU - Smiljanić, Miloljub
PY - 1995
UR - http://cer.ihtm.bg.ac.rs/handle/123456789/3072
AB - A numerical model of a photodiode with etched spherical pits on an active surface has been developed. Several geometrical parameters (radius of curvature, depth and arrangement of spherical pits, sample thickness and area, and thickness of the anti-reflection layer) were varied and their influence on the quantum efficiency of the structure was considered. It has been shown that the photodiode quantum efficiency can be optimized by the proper choice of these parameters. From the technological point of view, it is very important that the optimized quantum efficiency can be achieved without a strict definition of the device geometry.
PB - Elsevier BV
T2 - Microelectronics Journal
T1 - Photodiode quantum efficiency optimization using spherical pits on active surfaces
VL - 26
IS - 5
SP - 413
EP - 419
DO - 10.1016/0026-2692(95)98943-L
ER -
@article{
author = "Vujanić, Aleksandar and Smiljanić, Miloljub",
year = "1995",
url = "http://cer.ihtm.bg.ac.rs/handle/123456789/3072",
abstract = "A numerical model of a photodiode with etched spherical pits on an active surface has been developed. Several geometrical parameters (radius of curvature, depth and arrangement of spherical pits, sample thickness and area, and thickness of the anti-reflection layer) were varied and their influence on the quantum efficiency of the structure was considered. It has been shown that the photodiode quantum efficiency can be optimized by the proper choice of these parameters. From the technological point of view, it is very important that the optimized quantum efficiency can be achieved without a strict definition of the device geometry.",
publisher = "Elsevier BV",
journal = "Microelectronics Journal",
title = "Photodiode quantum efficiency optimization using spherical pits on active surfaces",
volume = "26",
number = "5",
pages = "413-419",
doi = "10.1016/0026-2692(95)98943-L"
}
Vujanić A, Smiljanić M. Photodiode quantum efficiency optimization using spherical pits on active surfaces. Microelectronics Journal. 1995;26(5):413-419
Vujanić, A.,& Smiljanić, M. (1995). Photodiode quantum efficiency optimization using spherical pits on active surfaces.
Microelectronics JournalElsevier BV., 26(5), 413-419.
https://doi.org/10.1016/0026-2692(95)98943-L
Vujanić Aleksandar, Smiljanić Miloljub, "Photodiode quantum efficiency optimization using spherical pits on active surfaces" 26, no. 5 (1995):413-419,
https://doi.org/10.1016/0026-2692(95)98943-L .
, 