A simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductors

dc.creator	Đurić, Zoran G.
dc.creator	Jakšić, Zoran
dc.creator	Vujanić, A.
dc.creator	Smiljanić, Miloljub
dc.date.accessioned	2019-09-10T13:29:52Z
dc.date.available	2019-09-10T13:29:52Z
dc.date.issued	1993
dc.identifier.issn	00200891
dc.identifier.uri	https://cer.ihtm.bg.ac.rs/handle/123456789/3071
dc.description.abstract	Using the well-known Beattie-Landsberg expression for Auger 1 lifetime and the “effective” Auger energy gap (EgA), we obtained a simple approximative expression for determination of the Auger 1 lifetime. We also obtained a formula for the electron concentration above which the effects of degeneration are significant.	en
dc.publisher	Elsevier	en
dc.rights	restrictedAccess
dc.source	Infrared Physics	en
dc.subject	Auger electron spectroscopy
dc.subject	Semiconductor devices
dc.subject	Beattie-Landsberg expression
dc.title	A simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductors	en
dc.type	article	en
dc.rights.license	ARR
dcterms.abstract	Јакшић, Зоран; Вујанић, A.; Смиљанић, Милољуб; Дјурић, Зоран Г.;
dc.rights.holder	Elsevier
dc.citation.volume	34
dc.citation.issue	6
dc.citation.spage	601
dc.citation.epage	605
dc.description.other	Erratum: [http://cer.ihtm.bg.ac.rs/handle/123456789/3079]
dc.identifier.doi	10.1016/0020-0891(93)90118-Q
dc.identifier.scopus	2-s2.0-0027813212
dc.type.version	publishedVersion