A simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductors

Đurić, Zoran G.; Jakšić, Zoran; Vujanić, A.; Smiljanić, Miloljub

doi:10.1016/0020-0891(93)90118-Q

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1993

Authors

Đurić, Zoran G.

Jakšić, Zoran

Vujanić, A.
Smiljanić, Miloljub

Article (Published version)

Elsevier

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Abstract

Using the well-known Beattie-Landsberg expression for Auger 1 lifetime and the “effective” Auger energy gap (EgA), we obtained a simple approximative expression for determination of the Auger 1 lifetime. We also obtained a formula for the electron concentration above which the effects of degeneration are significant.

Keywords:

Auger electron spectroscopy / Semiconductor devices / Beattie-Landsberg expression

Source:
Infrared Physics, 1993, 34, 6, 601-605

Publisher:

Elsevier BV

Note:

Erratum: http://cer.ihtm.bg.ac.rs/handle/123456789/3079

DOI: 10.1016/0020-0891(93)90118-Q

ISSN: 00200891