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A simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductors

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1993
Authors
Đurić, Zoran G.
Jakšić, Zoran
Vujanić, A.
Smiljanić, Miloljub
Article (Published version)
,
Elsevier
Metadata
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Abstract
Using the well-known Beattie-Landsberg expression for Auger 1 lifetime and the “effective” Auger energy gap (EgA), we obtained a simple approximative expression for determination of the Auger 1 lifetime. We also obtained a formula for the electron concentration above which the effects of degeneration are significant.
Keywords:
Auger electron spectroscopy / Semiconductor devices / Beattie-Landsberg expression
Source:
Infrared Physics, 1993, 34, 6, 601-605
Publisher:
  • Elsevier BV
Note:
  • Erratum: http://cer.ihtm.bg.ac.rs/handle/123456789/3079

DOI: 10.1016/0020-0891(93)90118-Q

ISSN: 00200891

Scopus: 2-s2.0-0027813212
[ Google Scholar ]
2
URI
http://cer.ihtm.bg.ac.rs/handle/123456789/3071
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