A simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductors
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Using the well-known Beattie-Landsberg expression for Auger 1 lifetime and the “effective” Auger energy gap (EgA), we obtained a simple approximative expression for determination of the Auger 1 lifetime. We also obtained a formula for the electron concentration above which the effects of degeneration are significant.
Keywords:Auger electron spectroscopy / Semiconductor devices / Beattie-Landsberg expression
Source:Infrared Physics, 1993, 34, 6, 601-605
- Elsevier BV