Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect

Abstract

In this work a detailed analysis of the quantum efficiency of InSb n+-p photodetectors produced by liquid phase epitaxy is given, in the case when the n+ region is doped to such a level that the Moss-Burstein effect plays an important role. Our starting point was the theoretically determined coefficient of intrinsic absorption and derived expressions for the generated photocurrent in the n+ region, depletion layer and p-phase of the photodetector. The results are presented in the form of graphical dependence of the quantum efficiency on the wavelength, with the electron concentration in the n+ layer as a parameter.