Investigation of the ion defect states by photoacoustic spectroscopy

dc.creator	Todorović, D. M.
dc.creator	Jović, Vesna
dc.creator	Smiljanić, Miloljub
dc.creator	Grozdić, T.
dc.date.accessioned	2019-01-30T17:14:58Z
dc.date.available	2019-01-30T17:14:58Z
dc.date.issued	2006
dc.identifier.uri	https://cer.ihtm.bg.ac.rs/handle/123456789/285
dc.description.abstract	The ion defect states in SiO2 film on Si substrata (SiO 2/Si) was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the energy of excitation optical beam in the sub-bandgap region. In the energy range near the energy gap of Si, the PA spectra are the consequence of the iondefect states formed on dielectric-semiconductor interface. The sub-bandgap PA spectra are proposed to obtain the energydependent distribution of interface states in SiO2 - Si system with different concentration of Na-ions.	en
dc.rights	restrictedAccess
dc.source	25th International Conference on Microelectronics, MIEL 2006 - Proceedings
dc.title	Investigation of the ion defect states by photoacoustic spectroscopy	en
dc.type	conferenceObject
dc.rights.license	ARR
dc.citation.spage	611
dc.citation.epage	614
dc.citation.other	: 611-614
dc.identifier.doi	10.1109/ICMEL.2006.1651031
dc.identifier.scopus	2-s2.0-77956501602
dc.type.version	publishedVersion