The ion defect states in SiO2 film on Si substrata (SiO 2/Si) was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the energy of excitation optical beam in the sub-bandgap region. In the energy range near the energy gap of Si, the PA spectra are the consequence of the iondefect states formed on dielectric-semiconductor interface. The sub-bandgap PA spectra are proposed to obtain the energydependent distribution of interface states in SiO2 - Si system with different concentration of Na-ions.
Source:
25th International Conference on Microelectronics, MIEL 2006 - Proceedings, 2006, 611-614
TY - CONF
AU - Todorović, D. M.
AU - Jović, Vesna
AU - Smiljanić, Miloljub
AU - Grozdić, T.
PY - 2006
UR - https://cer.ihtm.bg.ac.rs/handle/123456789/285
AB - The ion defect states in SiO2 film on Si substrata (SiO 2/Si) was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the energy of excitation optical beam in the sub-bandgap region. In the energy range near the energy gap of Si, the PA spectra are the consequence of the iondefect states formed on dielectric-semiconductor interface. The sub-bandgap PA spectra are proposed to obtain the energydependent distribution of interface states in SiO2 - Si system with different concentration of Na-ions.
C3 - 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
T1 - Investigation of the ion defect states by photoacoustic spectroscopy
SP - 611
EP - 614
DO - 10.1109/ICMEL.2006.1651031
ER -
@conference{
author = "Todorović, D. M. and Jović, Vesna and Smiljanić, Miloljub and Grozdić, T.",
year = "2006",
abstract = "The ion defect states in SiO2 film on Si substrata (SiO 2/Si) was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the energy of excitation optical beam in the sub-bandgap region. In the energy range near the energy gap of Si, the PA spectra are the consequence of the iondefect states formed on dielectric-semiconductor interface. The sub-bandgap PA spectra are proposed to obtain the energydependent distribution of interface states in SiO2 - Si system with different concentration of Na-ions.",
journal = "25th International Conference on Microelectronics, MIEL 2006 - Proceedings",
title = "Investigation of the ion defect states by photoacoustic spectroscopy",
pages = "611-614",
doi = "10.1109/ICMEL.2006.1651031"
}
Todorović, D. M., Jović, V., Smiljanić, M.,& Grozdić, T.. (2006). Investigation of the ion defect states by photoacoustic spectroscopy. in 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, 611-614.
https://doi.org/10.1109/ICMEL.2006.1651031
Todorović DM, Jović V, Smiljanić M, Grozdić T. Investigation of the ion defect states by photoacoustic spectroscopy. in 25th International Conference on Microelectronics, MIEL 2006 - Proceedings. 2006;:611-614.
doi:10.1109/ICMEL.2006.1651031 .
Todorović, D. M., Jović, Vesna, Smiljanić, Miloljub, Grozdić, T., "Investigation of the ion defect states by photoacoustic spectroscopy" in 25th International Conference on Microelectronics, MIEL 2006 - Proceedings (2006):611-614,
https://doi.org/10.1109/ICMEL.2006.1651031 . .
