Analytical modeling of the triggering drain voltage at the onset of the kink effect for PD SOINMOS

Abstract

Here we give a new approach for calculating triggering drain bias at the onset of the kink effect utilizing electron drift properties in the channel. This approach directly relates electron mobility in the channel of the PD SOI NMOS devices to the kink effect and gives possibility for determining mobility from the kink voltage Vkink. We compare our theory to the previously published experimental results and based on this match we predict behaviour of the kink effect for PD SOI NMOS components for various technology parameters. This theory is applicable to the PD SOI NMOS devices with effective channel length below 600 nm. Theory could be extended to the prediction of the breakdown drain-to-source bias at the PD SOI NMOS devices.