In this paper, results of structural modification of fullerene thin films by single and multiple charged boron ions (B+, B3+) are presented. The applied ion energies were in the range of 15 to 45 keV. The characterization of as-deposited and irradiated specimens has been performed by atomic force microscopy, Raman and Fourier transform infrared spectroscopy and UV/VIS spectrophotometry. The results of Raman analysis have shown the formation of amorphous layer after irradiation of fullerene thin films. Fourier transform infrared spectroscopy has confirmed the formation of new B-C bonds in irradiated films at higher fluences (2x1016 cm-2). The morphology of bombarded films has been changed significantly. The optical band gap was found to be reduced from 1.7 to 1.06 eV for irradiated films by B3+ ions and 0.7 eV for irradiated films by B+ ions.
U radu su prikazani rezultati strukturne modifikacije tankih slojeva fulerena bombardovanjem jednostruko i višestruko naelektrisanim jonima bora (B+, B3+). Energije korišćenih jona su bile u opsegu od 15 do 45 keV. Osobine deponovanih i ozračenih fulerenskih slojeva su proučavane pomoću mikroskopa atomske snage (AFM), Ramanovom i Furijeovom infracrvenom spektroskopijom (FTIR) i UV/VIS spektrometrijom. Rezultati koji su dobijeni na osnovu Ramanove spektroskopije su pokazali da se posle ozračivanja formirao sloj amorfnog ugljenika na površini uzorka. Furijeova infracrvena spektroskopija je pokazala da su se unutar ozračenog sloja formirale veze bora i ugljenika. Morfologija fulerenskih slojeva se značajno promenila posle bombardovanja jonima bora. Utvrđeno je da se energetski procep ozračenih slojeva smanjio sa 1.7 eV na 1.06 eV za slojeve bombardovane trostruko naelektrisanim jonima bora, i na 0.7 eV za slojeve bombardovane B+ jonima.
TY - JOUR
AU - Todorović-Marković, Biljana
AU - Draganić, Ilija
AU - Vasiljević-Radović, Dana
AU - Romčević, Nebojša
AU - Romčević, Maja
AU - Dramićanin, Miroslav
AU - Marković, Zoran M.
PY - 2006
UR - https://cer.ihtm.bg.ac.rs/handle/123456789/272
AB - In this paper, results of structural modification of fullerene thin films by single and multiple charged boron ions (B+, B3+) are presented. The applied ion energies were in the range of 15 to 45 keV. The characterization of as-deposited and irradiated specimens has been performed by atomic force microscopy, Raman and Fourier transform infrared spectroscopy and UV/VIS spectrophotometry. The results of Raman analysis have shown the formation of amorphous layer after irradiation of fullerene thin films. Fourier transform infrared spectroscopy has confirmed the formation of new B-C bonds in irradiated films at higher fluences (2x1016 cm-2). The morphology of bombarded films has been changed significantly. The optical band gap was found to be reduced from 1.7 to 1.06 eV for irradiated films by B3+ ions and 0.7 eV for irradiated films by B+ ions.
AB - U radu su prikazani rezultati strukturne modifikacije tankih slojeva fulerena bombardovanjem jednostruko i višestruko naelektrisanim jonima bora (B+, B3+). Energije korišćenih jona su bile u opsegu od 15 do 45 keV. Osobine deponovanih i ozračenih fulerenskih slojeva su proučavane pomoću mikroskopa atomske snage (AFM), Ramanovom i Furijeovom infracrvenom spektroskopijom (FTIR) i UV/VIS spektrometrijom. Rezultati koji su dobijeni na osnovu Ramanove spektroskopije su pokazali da se posle ozračivanja formirao sloj amorfnog ugljenika na površini uzorka. Furijeova infracrvena spektroskopija je pokazala da su se unutar ozračenog sloja formirale veze bora i ugljenika. Morfologija fulerenskih slojeva se značajno promenila posle bombardovanja jonima bora. Utvrđeno je da se energetski procep ozračenih slojeva smanjio sa 1.7 eV na 1.06 eV za slojeve bombardovane trostruko naelektrisanim jonima bora, i na 0.7 eV za slojeve bombardovane B+ jonima.
T2 - Tehnika - Novi materijali
T1 - Synthesis of amorphous boron carbide by single and multiple charged boron ions bombardment of fullerene thin films
T1 - Sinteza amorfnog bor karbida bombardovanjem tankih slojeva fulerena jonima bora
VL - 15
IS - 6
SP - 7
EP - 13
UR - https://hdl.handle.net/21.15107/rcub_cer_272
ER -
@article{
author = "Todorović-Marković, Biljana and Draganić, Ilija and Vasiljević-Radović, Dana and Romčević, Nebojša and Romčević, Maja and Dramićanin, Miroslav and Marković, Zoran M.",
year = "2006",
abstract = "In this paper, results of structural modification of fullerene thin films by single and multiple charged boron ions (B+, B3+) are presented. The applied ion energies were in the range of 15 to 45 keV. The characterization of as-deposited and irradiated specimens has been performed by atomic force microscopy, Raman and Fourier transform infrared spectroscopy and UV/VIS spectrophotometry. The results of Raman analysis have shown the formation of amorphous layer after irradiation of fullerene thin films. Fourier transform infrared spectroscopy has confirmed the formation of new B-C bonds in irradiated films at higher fluences (2x1016 cm-2). The morphology of bombarded films has been changed significantly. The optical band gap was found to be reduced from 1.7 to 1.06 eV for irradiated films by B3+ ions and 0.7 eV for irradiated films by B+ ions., U radu su prikazani rezultati strukturne modifikacije tankih slojeva fulerena bombardovanjem jednostruko i višestruko naelektrisanim jonima bora (B+, B3+). Energije korišćenih jona su bile u opsegu od 15 do 45 keV. Osobine deponovanih i ozračenih fulerenskih slojeva su proučavane pomoću mikroskopa atomske snage (AFM), Ramanovom i Furijeovom infracrvenom spektroskopijom (FTIR) i UV/VIS spektrometrijom. Rezultati koji su dobijeni na osnovu Ramanove spektroskopije su pokazali da se posle ozračivanja formirao sloj amorfnog ugljenika na površini uzorka. Furijeova infracrvena spektroskopija je pokazala da su se unutar ozračenog sloja formirale veze bora i ugljenika. Morfologija fulerenskih slojeva se značajno promenila posle bombardovanja jonima bora. Utvrđeno je da se energetski procep ozračenih slojeva smanjio sa 1.7 eV na 1.06 eV za slojeve bombardovane trostruko naelektrisanim jonima bora, i na 0.7 eV za slojeve bombardovane B+ jonima.",
journal = "Tehnika - Novi materijali",
title = "Synthesis of amorphous boron carbide by single and multiple charged boron ions bombardment of fullerene thin films, Sinteza amorfnog bor karbida bombardovanjem tankih slojeva fulerena jonima bora",
volume = "15",
number = "6",
pages = "7-13",
url = "https://hdl.handle.net/21.15107/rcub_cer_272"
}
Todorović-Marković, B., Draganić, I., Vasiljević-Radović, D., Romčević, N., Romčević, M., Dramićanin, M.,& Marković, Z. M.. (2006). Synthesis of amorphous boron carbide by single and multiple charged boron ions bombardment of fullerene thin films. in Tehnika - Novi materijali, 15(6), 7-13.
https://hdl.handle.net/21.15107/rcub_cer_272
Todorović-Marković B, Draganić I, Vasiljević-Radović D, Romčević N, Romčević M, Dramićanin M, Marković ZM. Synthesis of amorphous boron carbide by single and multiple charged boron ions bombardment of fullerene thin films. in Tehnika - Novi materijali. 2006;15(6):7-13.
https://hdl.handle.net/21.15107/rcub_cer_272 .
Todorović-Marković, Biljana, Draganić, Ilija, Vasiljević-Radović, Dana, Romčević, Nebojša, Romčević, Maja, Dramićanin, Miroslav, Marković, Zoran M., "Synthesis of amorphous boron carbide by single and multiple charged boron ions bombardment of fullerene thin films" in Tehnika - Novi materijali, 15, no. 6 (2006):7-13,
https://hdl.handle.net/21.15107/rcub_cer_272 .
