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Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH

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2019
micromachines-10-00102.pdf (2.545Mb)
Authors
Smiljanić, Milče
Lazić, Žarko
Radjenović, Branislav
Radmilović-Radjenović, Marija
Jović, Vesna
Article (Published version)
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Abstract
Squares and circles are basic patterns for most mask designs of silicon microdevices. Evolution of etched Si crystallographic planes defined by square and circle patterns in the masking layer is presented and analyzed in this paper. The sides of square patterns in the masking layer are designed along predetermined <n10> crystallographic directions. Etching of a (100) silicon substrate is performed in 25 wt % tetramethylammonium hydroxide (TMAH) water solution at the temperature of 80 °C. Additionally, this paper presents three-dimensional (3D) simulations of the profile evolution during silicon etching of designed patterns based on the level-set method. We analyzed etching of designed patterns in the shape of square and circle islands. The crystallographic planes that appear during etching of 3D structures in the experiment and simulated etching profiles are determined. A good agreement between dominant crystallographic planes through experiments and simulations is obtained. The etch r...ates of dominant exposed crystallographic planes are also analytically calculated.

Keywords:
3D simulation / Level-set method / Silicon / Tetramethylammonium hydroxide (TMAH) / Wet etching
Source:
Micromachines, 2019, 10, 2, 102-
Publisher:
  • MDPI AG, Basel, Switzerland
Projects:
  • Micro- Nanosystems and Sensors for Electric Power and Process Industry and Environmental Protection (RS-32008)
  • Nonlinear photonics of inhomogeneous media and surfaces (RS-171036)

DOI: 10.3390/mi10020102

ISSN: 2072-666X

WoS: 000460798200027

Scopus: 2-s2.0-85061206432
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URI
http://www.mdpi.com/2072-666X/10/2/102
http://cer.ihtm.bg.ac.rs/handle/123456789/2640
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