Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH
Authors
Smiljanić, Milče
Lazić, Žarko

Rađenović, Branislav

Radmilović-Radjenović, Marija

Jović, Vesna

Article (Published version)
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Squares and circles are basic patterns for most mask designs of silicon microdevices. Evolution of etched Si crystallographic planes defined by square and circle patterns in the masking layer is presented and analyzed in this paper. The sides of square patterns in the masking layer are designed along predetermined <n10> crystallographic directions. Etching of a (100) silicon substrate is performed in 25 wt % tetramethylammonium hydroxide (TMAH) water solution at the temperature of 80 °C. Additionally, this paper presents three-dimensional (3D) simulations of the profile evolution during silicon etching of designed patterns based on the level-set method. We analyzed etching of designed patterns in the shape of square and circle islands. The crystallographic planes that appear during etching of 3D structures in the experiment and simulated etching profiles are determined. A good agreement between dominant crystallographic planes through experiments and simulations is obtained. The etch r...ates of dominant exposed crystallographic planes are also analytically calculated.
Keywords:
3D simulation / Level-set method / Silicon / Tetramethylammonium hydroxide (TMAH) / Wet etchingSource:
Micromachines, 2019, 10, 2, 102-Publisher:
- MDPI
Funding / projects:
- Micro- Nanosystems and Sensors for Electric Power and Process Industry and Environmental Protection (RS-32008)
- Nonlinear photonics of inhomogeneous media and surfaces (RS-171036)
DOI: 10.3390/mi10020102
ISSN: 2072-666X
WoS: 000460798200027
Scopus: 2-s2.0-85061206432
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IHTMTY - JOUR AU - Smiljanić, Milče AU - Lazić, Žarko AU - Rađenović, Branislav AU - Radmilović-Radjenović, Marija AU - Jović, Vesna PY - 2019 UR - http://www.mdpi.com/2072-666X/10/2/102 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/2640 AB - Squares and circles are basic patterns for most mask designs of silicon microdevices. Evolution of etched Si crystallographic planes defined by square and circle patterns in the masking layer is presented and analyzed in this paper. The sides of square patterns in the masking layer are designed along predetermined <n10> crystallographic directions. Etching of a (100) silicon substrate is performed in 25 wt % tetramethylammonium hydroxide (TMAH) water solution at the temperature of 80 °C. Additionally, this paper presents three-dimensional (3D) simulations of the profile evolution during silicon etching of designed patterns based on the level-set method. We analyzed etching of designed patterns in the shape of square and circle islands. The crystallographic planes that appear during etching of 3D structures in the experiment and simulated etching profiles are determined. A good agreement between dominant crystallographic planes through experiments and simulations is obtained. The etch rates of dominant exposed crystallographic planes are also analytically calculated. PB - MDPI T2 - Micromachines T2 - Micromachines T1 - Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH VL - 10 IS - 2 SP - 102 DO - 10.3390/mi10020102 ER -
@article{ author = "Smiljanić, Milče and Lazić, Žarko and Rađenović, Branislav and Radmilović-Radjenović, Marija and Jović, Vesna", year = "2019", abstract = "Squares and circles are basic patterns for most mask designs of silicon microdevices. Evolution of etched Si crystallographic planes defined by square and circle patterns in the masking layer is presented and analyzed in this paper. The sides of square patterns in the masking layer are designed along predetermined <n10> crystallographic directions. Etching of a (100) silicon substrate is performed in 25 wt % tetramethylammonium hydroxide (TMAH) water solution at the temperature of 80 °C. Additionally, this paper presents three-dimensional (3D) simulations of the profile evolution during silicon etching of designed patterns based on the level-set method. We analyzed etching of designed patterns in the shape of square and circle islands. The crystallographic planes that appear during etching of 3D structures in the experiment and simulated etching profiles are determined. A good agreement between dominant crystallographic planes through experiments and simulations is obtained. The etch rates of dominant exposed crystallographic planes are also analytically calculated.", publisher = "MDPI", journal = "Micromachines, Micromachines", title = "Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH", volume = "10", number = "2", pages = "102", doi = "10.3390/mi10020102" }
Smiljanić, M., Lazić, Ž., Rađenović, B., Radmilović-Radjenović, M.,& Jović, V.. (2019). Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH. in Micromachines MDPI., 10(2), 102. https://doi.org/10.3390/mi10020102
Smiljanić M, Lazić Ž, Rađenović B, Radmilović-Radjenović M, Jović V. Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH. in Micromachines. 2019;10(2):102. doi:10.3390/mi10020102 .
Smiljanić, Milče, Lazić, Žarko, Rađenović, Branislav, Radmilović-Radjenović, Marija, Jović, Vesna, "Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH" in Micromachines, 10, no. 2 (2019):102, https://doi.org/10.3390/mi10020102 . .