The Schottky barrier contribution to photoacoustic effect in Au-Si system

Authorized Users Only
2000
Authors
Todorović, D. M.
Nikolić, P.M.
Smiljanić, Miloljub
Petrović, R.
Bojicić, A.I.
Vasiljević-Radović, Dana
Radulović, Katarina
Conference object (Published version)
Metadata
Show full item record
Abstract
The photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on the thermal and electronic transport processes in semiconductor was investigated. The amplitude and phase spectra were measured for dependence on the modulation frequency of excitation optical beam, using the PA frequency transmission technique. Thermal, elastic and electronic transport parameters were obtained by the analysis of experimental and theoretical PA signals, including the Schottky barrier effect, for a metal film-semiconductor substrate sample.
Keywords:
Schottky barriers / Photoacoustic effects / Frequency measurement / Phase measurement / Signal analysis
Source:
22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 2000, 1, 189-192
Publisher:
  • IEEE Computer Society

DOI: 10.1109/ICMEL.2000.840552

ISBN: 0-7803-5235-1

Scopus: 2-s2.0-84906315176
[ Google Scholar ]
1
URI
http://cer.ihtm.bg.ac.rs/handle/123456789/25
Collections
Institution
IHTM