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dc.creatorĐurić, Zoran G.
dc.creatorSmiljanić, Milče
dc.creatorRadulović, Katarina
dc.creatorLazić, Žarko
dc.date.accessioned2019-01-30T17:14:08Z
dc.date.available2019-01-30T17:14:08Z
dc.date.issued2006
dc.identifier.issn2159-1660
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/245
dc.description.abstractWe fabricated Silicon-On-Insulator (Sol) pressure sensors intended for operation in a wide temperature range. After the thermal oxidation process, the measured sheet resistance of the silicon active layer was higher than expected for the case when the dopant distribution in the active layer is uniform and the layer thickness reduced. The reason was the redistribution of dopant (boron) in the active layer during the high temperature thermal oxidation processes. We developed a model to calculate the boron redistribution in an Sol wafer which was initially uniformly doped. The temperature dependence of hole mobility (and, based on it, the sheet resistance and its temperature dependence) was determined for a calculated impurity profile after oxidation in wet O-2. The experimental temperature dependence of sheet resistance was obtained by measuring the temperature dependence of piezoresistor resistance. The best match between the theoretical and experimental TCR (temperature coefficient of resistance) was achieved by slightly modifying the Arora's model for hole mobility.en
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relationTR6151 - Micro and Nanosystem Technologies, Structures and Sensors
dc.rightsrestrictedAccess
dc.source25th International Conference on Microelectronics, MIEL 2006 - Proceedings
dc.titleBoron redistribution during SOI wafers thermal oxidationen
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractЂурић, Зоран Г.; Смиљанић, Милче; Лазић, Жарко; Радуловић, Катарина;
dc.citation.spage333
dc.citation.epage336
dc.citation.other: 333-336
dc.identifier.doi10.1109/ICMEL.2006.1650961
dc.identifier.rcubConv_2361
dc.identifier.scopus2-s2.0-77956553625
dc.identifier.wos000238839700064
dc.type.versionpublishedVersion


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