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Boron redistribution during SOI wafers thermal oxidation

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2006
Authors
Đurić, Zoran G.
Smiljanić, Milče
Radulović, Katarina
Lazić, Žarko
Conference object (Published version)
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Abstract
We fabricated Silicon-On-Insulator (Sol) pressure sensors intended for operation in a wide temperature range. After the thermal oxidation process, the measured sheet resistance of the silicon active layer was higher than expected for the case when the dopant distribution in the active layer is uniform and the layer thickness reduced. The reason was the redistribution of dopant (boron) in the active layer during the high temperature thermal oxidation processes. We developed a model to calculate the boron redistribution in an Sol wafer which was initially uniformly doped. The temperature dependence of hole mobility (and, based on it, the sheet resistance and its temperature dependence) was determined for a calculated impurity profile after oxidation in wet O-2. The experimental temperature dependence of sheet resistance was obtained by measuring the temperature dependence of piezoresistor resistance. The best match between the theoretical and experimental TCR (temperature coefficient of ...resistance) was achieved by slightly modifying the Arora's model for hole mobility.

Source:
25th International Conference on Microelectronics, MIEL 2006 - Proceedings, 2006, 333-336
Publisher:
  • Institute of Electrical and Electronics Engineers Inc.
Projects:
  • TR6151 - Micro and Nanosystem Technologies, Structures and Sensors

DOI: 10.1109/ICMEL.2006.1650961

ISSN: 2159-1660

WoS: 000238839700064

Scopus: 2-s2.0-77956553625
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URI
http://cer.ihtm.bg.ac.rs/handle/123456789/245
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