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dc.creatorTodorović, D. M.
dc.creatorNikolić, P.M.
dc.creatorElazar, J.
dc.creatorSmiljanić, Miloljub
dc.creatorBojičić, A.I.
dc.creatorVasiljević-Radović, Dana
dc.creatorRadulović, Katarina
dc.date.accessioned2019-01-30T17:09:19Z
dc.date.available2019-01-30T17:09:19Z
dc.date.issued2000
dc.identifier.isbn0-7803-5235-1
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/23
dc.description.abstractThermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification.en
dc.publisherIEEE Computer Society
dc.rightsrestrictedAccess
dc.source22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
dc.titleInvestigation of ion-beam modified silicon by photoacoustic methoden
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractБојичић, A.И.; Николић, П.М.; Елазар, Ј.; Тодоровић, Д. М.; Радуловић, Катарина; Васиљевић-Радовић, Дана; Смиљанић, Милољуб;
dc.citation.volume1
dc.citation.spage247
dc.citation.epage250
dc.citation.other1: 247-250
dc.identifier.doi10.1109/ICMEL.2000.840566
dc.identifier.rcubConv_4348
dc.identifier.scopus2-s2.0-0033299508
dc.type.versionpublishedVersion


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