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Investigation of ion-beam modified silicon by photoacoustic method

Authorized Users Only
2000
Authors
Todorović, D. M.
Nikolić, P.M.
Elazar, J.
Smiljanić, Miloljub
Bojičić, A.I.
Vasiljević-Radović, Dana
Radulović, Katarina
Conference object (Published version)
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Abstract
Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification.
Keywords:
Silicon / Frequency / Thermoelasticity / Microphones / Plasma devices / Plasma immersion ion implantation / Plasma materials processing / Plasma waves / Semiconductor materials / Ion implantation
Source:
22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 2000, 1, 247-250
Publisher:
  • IEEE Computer Society

DOI: 10.1109/ICMEL.2000.840566

ISBN: 0-7803-5235-1

Scopus: 2-s2.0-0033299508
[ Google Scholar ]
URI
https://cer.ihtm.bg.ac.rs/handle/123456789/23
Collections
  • Radovi istraživača / Researchers' publications
Institution/Community
IHTM
TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, P.M.
AU  - Elazar, J.
AU  - Smiljanić, Miloljub
AU  - Bojičić, A.I.
AU  - Vasiljević-Radović, Dana
AU  - Radulović, Katarina
PY  - 2000
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/23
AB  - Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification.
PB  - IEEE Computer Society
C3  - 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
T1  - Investigation of ion-beam modified silicon by photoacoustic method
VL  - 1
SP  - 247
EP  - 250
DO  - 10.1109/ICMEL.2000.840566
ER  - 
@conference{
author = "Todorović, D. M. and Nikolić, P.M. and Elazar, J. and Smiljanić, Miloljub and Bojičić, A.I. and Vasiljević-Radović, Dana and Radulović, Katarina",
year = "2000",
abstract = "Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification.",
publisher = "IEEE Computer Society",
journal = "22nd International Conference on Microelectronics, MIEL 2000 - Proceedings",
title = "Investigation of ion-beam modified silicon by photoacoustic method",
volume = "1",
pages = "247-250",
doi = "10.1109/ICMEL.2000.840566"
}
Todorović, D. M., Nikolić, P.M., Elazar, J., Smiljanić, M., Bojičić, A.I., Vasiljević-Radović, D.,& Radulović, K.. (2000). Investigation of ion-beam modified silicon by photoacoustic method. in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
IEEE Computer Society., 1, 247-250.
https://doi.org/10.1109/ICMEL.2000.840566
Todorović DM, Nikolić P, Elazar J, Smiljanić M, Bojičić A, Vasiljević-Radović D, Radulović K. Investigation of ion-beam modified silicon by photoacoustic method. in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. 2000;1:247-250.
doi:10.1109/ICMEL.2000.840566 .
Todorović, D. M., Nikolić, P.M., Elazar, J., Smiljanić, Miloljub, Bojičić, A.I., Vasiljević-Radović, Dana, Radulović, Katarina, "Investigation of ion-beam modified silicon by photoacoustic method" in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 1 (2000):247-250,
https://doi.org/10.1109/ICMEL.2000.840566 . .

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