Investigation of ion-beam modified silicon by photoacoustic method
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2000
Authors
Todorović, D. M.Nikolić, P.M.
Elazar, J.
Smiljanić, Miloljub
Bojičić, A.I.
Vasiljević-Radović, Dana

Radulović, Katarina

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Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification.
Keywords:
Silicon / Frequency / Thermoelasticity / Microphones / Plasma devices / Plasma immersion ion implantation / Plasma materials processing / Plasma waves / Semiconductor materials / Ion implantationSource:
22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 2000, 1, 247-250Publisher:
- IEEE Computer Society
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IHTMTY - CONF AU - Todorović, D. M. AU - Nikolić, P.M. AU - Elazar, J. AU - Smiljanić, Miloljub AU - Bojičić, A.I. AU - Vasiljević-Radović, Dana AU - Radulović, Katarina PY - 2000 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/23 AB - Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification. PB - IEEE Computer Society C3 - 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings T1 - Investigation of ion-beam modified silicon by photoacoustic method VL - 1 SP - 247 EP - 250 DO - 10.1109/ICMEL.2000.840566 ER -
@conference{ author = "Todorović, D. M. and Nikolić, P.M. and Elazar, J. and Smiljanić, Miloljub and Bojičić, A.I. and Vasiljević-Radović, Dana and Radulović, Katarina", year = "2000", abstract = "Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification.", publisher = "IEEE Computer Society", journal = "22nd International Conference on Microelectronics, MIEL 2000 - Proceedings", title = "Investigation of ion-beam modified silicon by photoacoustic method", volume = "1", pages = "247-250", doi = "10.1109/ICMEL.2000.840566" }
Todorović, D. M., Nikolić, P.M., Elazar, J., Smiljanić, M., Bojičić, A.I., Vasiljević-Radović, D.,& Radulović, K.. (2000). Investigation of ion-beam modified silicon by photoacoustic method. in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings IEEE Computer Society., 1, 247-250. https://doi.org/10.1109/ICMEL.2000.840566
Todorović DM, Nikolić P, Elazar J, Smiljanić M, Bojičić A, Vasiljević-Radović D, Radulović K. Investigation of ion-beam modified silicon by photoacoustic method. in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. 2000;1:247-250. doi:10.1109/ICMEL.2000.840566 .
Todorović, D. M., Nikolić, P.M., Elazar, J., Smiljanić, Miloljub, Bojičić, A.I., Vasiljević-Radović, Dana, Radulović, Katarina, "Investigation of ion-beam modified silicon by photoacoustic method" in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 1 (2000):247-250, https://doi.org/10.1109/ICMEL.2000.840566 . .