Investigation of ion-beam modified silicon by photoacoustic method
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2000
Authors
Todorović, D. M.Nikolić, P.M.
Elazar, J.
Smiljanić, Miloljub
Bojičić, A.I.
Vasiljević-Radović, Dana
Radulović, Katarina
Conference object (Published version)
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Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification.
Keywords:
Silicon / Frequency / Thermoelasticity / Microphones / Plasma devices / Plasma immersion ion implantation / Plasma materials processing / Plasma waves / Semiconductor materials / Ion implantationSource:
22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 2000, 1, 247-250Publisher:
- IEEE Computer Society