Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification.
Keywords:
Silicon / Frequency / Thermoelasticity / Microphones / Plasma devices / Plasma immersion ion implantation / Plasma materials processing / Plasma waves / Semiconductor materials / Ion implantation
Source:
22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 2000, 1, 247-250
TY - CONF
AU - Todorović, D. M.
AU - Nikolić, P.M.
AU - Elazar, J.
AU - Smiljanić, Miloljub
AU - Bojičić, A.I.
AU - Vasiljević-Radović, Dana
AU - Radulović, Katarina
PY - 2000
UR - http://cer.ihtm.bg.ac.rs/handle/123456789/23
AB - Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification.
PB - IEEE Computer Society
C3 - 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
T1 - Investigation of ion-beam modified silicon by photoacoustic method
VL - 1
SP - 247
EP - 250
DO - 10.1109/ICMEL.2000.840566
ER -
@conference{
author = "Todorović, D. M. and Nikolić, P.M. and Elazar, J. and Smiljanić, Miloljub and Bojičić, A.I. and Vasiljević-Radović, Dana and Radulović, Katarina",
year = "2000",
url = "http://cer.ihtm.bg.ac.rs/handle/123456789/23",
abstract = "Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification.",
publisher = "IEEE Computer Society",
journal = "22nd International Conference on Microelectronics, MIEL 2000 - Proceedings",
title = "Investigation of ion-beam modified silicon by photoacoustic method",
volume = "1",
pages = "247-250",
doi = "10.1109/ICMEL.2000.840566"
}
Todorović DM, Nikolić P, Elazar J, Smiljanić M, Bojičić A, Vasiljević-Radović D, Radulović K. Investigation of ion-beam modified silicon by photoacoustic method. 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. 2000;1:247-250
Todorović, D. M., Nikolić, P.M., Elazar, J., Smiljanić, M., Bojičić, A.I., Vasiljević-Radović, D.,& Radulović, K. (2000). Investigation of ion-beam modified silicon by photoacoustic method.
22nd International Conference on Microelectronics, MIEL 2000 - ProceedingsIEEE Computer Society., 1, 247-250.
https://doi.org/10.1109/ICMEL.2000.840566
Todorović D. M., Nikolić P.M., Elazar J., Smiljanić Miloljub, Bojičić A.I., Vasiljević-Radović Dana, Radulović Katarina, "Investigation of ion-beam modified silicon by photoacoustic method" 1 (2000):247-250,
https://doi.org/10.1109/ICMEL.2000.840566 .
