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dc.creatorDinović, Z.
dc.creatorJović, Vesna
dc.creatorPetrović, R.
dc.date.accessioned2019-01-30T17:09:15Z
dc.date.available2019-01-30T17:09:15Z
dc.date.issued2000
dc.identifier.isbn0780352351
dc.identifier.isbn978-078035235-3
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/22
dc.description.abstractWe used mechanical shadow masks, which are made by silicon micromachining, to obtain selective area epitaxial (SAE) growth of (Hg,Cd)Te on CdTe substrates. The layers were grown by isothermal vapor phase epitaxy (ISOVPE) from solid HgTe source. The grown mesa structures were compared with (Hg,Cd)Te layers obtained by SAE growth under similar conditions, within openings in SiO x on the CdTe substrate. Also, it is possible to obtain better active area delineation of detector structure using SAE growth than by wet chemical etching.en
dc.publisherIEEE Computer Society
dc.rightsrestrictedAccess
dc.source22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
dc.titleSelective area epitaxial growth of Hg1-xCdxTe by isothermal vapor-phase epitaxyen
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractПетровић, Р.; Јовић, Весна; Диновић, З.;
dc.citation.volume1
dc.citation.spage277
dc.citation.epage280
dc.citation.other1: 277-280
dc.identifier.doi10.1109/ICMEL.2000.840573
dc.identifier.rcubConv_4349
dc.identifier.scopus2-s2.0-0033297876
dc.type.versionpublishedVersion


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