Selective area epitaxial growth of Hg1-xCdxTe by isothermal vapor-phase epitaxy
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We used mechanical shadow masks, which are made by silicon micromachining, to obtain selective area epitaxial (SAE) growth of (Hg,Cd)Te on CdTe substrates. The layers were grown by isothermal vapor phase epitaxy (ISOVPE) from solid HgTe source. The grown mesa structures were compared with (Hg,Cd)Te layers obtained by SAE growth under similar conditions, within openings in SiO x on the CdTe substrate. Also, it is possible to obtain better active area delineation of detector structure using SAE growth than by wet chemical etching.
Izvor:22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 2000, 1, 277-280
- IEEE Computer Society