Magnetic and electric control of spin- and valley-polarized transport across tunnel junctions on monolayer WSe2
Apstrakt
The recent experimental realization of high-quality WSe2 leads to the possibility of an efficient manipulation of its spin and valley degrees of freedom. Its electronic properties comprise a huge spin-orbit coupling, a direct band gap, and a strong anisotropic lifting of the degeneracy of the valley degree of freedom in a magnetic field. We evaluate its band structure and study ballistic electron transport through single and double junctions (or barriers) on monolayer WSe2 in the presence of spin M-s and valley M-v Zeeman fields and of an electric potential U. The conductance versus the field Ms or Mv decreases in a fluctuating manner. For a single junction, the spin P-s and valley P-v polarizations rise with M = M-v = 2M(s), reach a value of more than 55%, and become perfect above U approximate to 45 meV while for a double junction this change can occur for U >= 50 meV and M >= 5 meV. In certain regions of the (M, U) plane P-v becomes perfect. The conductance g(c), its spin-up and spi...n-down components, and both polarizations oscillate with the barrier width d. The ability to isolate various carrier degrees of freedom in WSe2 may render it a promising candidate for new spintronic and valleytronic devices.
Izvor:
Physical Review B, 2017, 95, 23, 235402-Izdavač:
- Amer Physical Soc, College Pk
Finansiranje / projekti:
- University of Hafr Al Batin
- Mikro, nano-sistemi i senzori za primenu u elektroprivredi, procesnoj industriji i zaštiti životne sredine (RS-MESTD-Technological Development (TD or TR)-32008)
- Canadian NSERC - OGP0121756
DOI: 10.1103/PhysRevB.95.235402
ISSN: 2469-9950
WoS: 000402467200007
Scopus: 2-s2.0-85024371237
Institucija/grupa
IHTMTY - JOUR AU - Tahir, Muhammad AU - Krstajić, Predrag AU - Vasilopoulos, Panagiotis PY - 2017 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/2236 AB - The recent experimental realization of high-quality WSe2 leads to the possibility of an efficient manipulation of its spin and valley degrees of freedom. Its electronic properties comprise a huge spin-orbit coupling, a direct band gap, and a strong anisotropic lifting of the degeneracy of the valley degree of freedom in a magnetic field. We evaluate its band structure and study ballistic electron transport through single and double junctions (or barriers) on monolayer WSe2 in the presence of spin M-s and valley M-v Zeeman fields and of an electric potential U. The conductance versus the field Ms or Mv decreases in a fluctuating manner. For a single junction, the spin P-s and valley P-v polarizations rise with M = M-v = 2M(s), reach a value of more than 55%, and become perfect above U approximate to 45 meV while for a double junction this change can occur for U >= 50 meV and M >= 5 meV. In certain regions of the (M, U) plane P-v becomes perfect. The conductance g(c), its spin-up and spin-down components, and both polarizations oscillate with the barrier width d. The ability to isolate various carrier degrees of freedom in WSe2 may render it a promising candidate for new spintronic and valleytronic devices. PB - Amer Physical Soc, College Pk T2 - Physical Review B T1 - Magnetic and electric control of spin- and valley-polarized transport across tunnel junctions on monolayer WSe2 VL - 95 IS - 23 SP - 235402 DO - 10.1103/PhysRevB.95.235402 ER -
@article{ author = "Tahir, Muhammad and Krstajić, Predrag and Vasilopoulos, Panagiotis", year = "2017", abstract = "The recent experimental realization of high-quality WSe2 leads to the possibility of an efficient manipulation of its spin and valley degrees of freedom. Its electronic properties comprise a huge spin-orbit coupling, a direct band gap, and a strong anisotropic lifting of the degeneracy of the valley degree of freedom in a magnetic field. We evaluate its band structure and study ballistic electron transport through single and double junctions (or barriers) on monolayer WSe2 in the presence of spin M-s and valley M-v Zeeman fields and of an electric potential U. The conductance versus the field Ms or Mv decreases in a fluctuating manner. For a single junction, the spin P-s and valley P-v polarizations rise with M = M-v = 2M(s), reach a value of more than 55%, and become perfect above U approximate to 45 meV while for a double junction this change can occur for U >= 50 meV and M >= 5 meV. In certain regions of the (M, U) plane P-v becomes perfect. The conductance g(c), its spin-up and spin-down components, and both polarizations oscillate with the barrier width d. The ability to isolate various carrier degrees of freedom in WSe2 may render it a promising candidate for new spintronic and valleytronic devices.", publisher = "Amer Physical Soc, College Pk", journal = "Physical Review B", title = "Magnetic and electric control of spin- and valley-polarized transport across tunnel junctions on monolayer WSe2", volume = "95", number = "23", pages = "235402", doi = "10.1103/PhysRevB.95.235402" }
Tahir, M., Krstajić, P.,& Vasilopoulos, P.. (2017). Magnetic and electric control of spin- and valley-polarized transport across tunnel junctions on monolayer WSe2. in Physical Review B Amer Physical Soc, College Pk., 95(23), 235402. https://doi.org/10.1103/PhysRevB.95.235402
Tahir M, Krstajić P, Vasilopoulos P. Magnetic and electric control of spin- and valley-polarized transport across tunnel junctions on monolayer WSe2. in Physical Review B. 2017;95(23):235402. doi:10.1103/PhysRevB.95.235402 .
Tahir, Muhammad, Krstajić, Predrag, Vasilopoulos, Panagiotis, "Magnetic and electric control of spin- and valley-polarized transport across tunnel junctions on monolayer WSe2" in Physical Review B, 95, no. 23 (2017):235402, https://doi.org/10.1103/PhysRevB.95.235402 . .