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dc.creatorTahir, Muhammad
dc.creatorKrstajić, Predrag
dc.creatorVasilopoulos, Panagiotis
dc.date.accessioned2019-01-30T17:54:25Z
dc.date.available2019-01-30T17:54:25Z
dc.date.issued2017
dc.identifier.issn0295-5075
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/2146
dc.description.abstractThe electronic properties of WSe2 comprise a huge spin-orbit coupling, a wide direct band gap, and especially a strong anisotropic lifting of the degeneracy of the valley degree of freedom in a magnetic field. We study ballistic electron transport through single or double junctions on monolayer WSe2 in the presence of spin M-s and valley M-v Zeeman fields and of an electric potential U. The conductance vs. the field M-s or M-v decreases in a fluctuating manner. For a single junction the spin P-s and valley P-v polarizations rise with M = M-v = 2M(s), reach a value of more than 70%, and become perfect above U approximate to 90meV while for a double junction this change can occur for U approximate to 50meV and M >= 10meV. Pv increases with U and both polarizations oscillate with the junction width. The results may render WSe2 a promising candidate for new spintronic and valleytronic devices.en
dc.publisherEpl Association, European Physical Society, Mulhouse
dc.relationUniversity of Hafr Al Batin
dc.relationinfo:eu-repo/grantAgreement/MESTD/Technological Development (TD or TR)/32008/RS//
dc.relationCanadian NSERC - OGP0121756
dc.rightsrestrictedAccess
dc.sourceEurophysics Letters
dc.titleZeeman- and electric-field control of spin- and valley-polarized transport through biased magnetic junctions on WSe2en
dc.typearticle
dc.rights.licenseARR
dcterms.abstractТахир, М.; Василопоулос, П.; Крстајић, Предраг;
dc.citation.volume118
dc.citation.issue1
dc.citation.other118(1):
dc.citation.rankM22
dc.identifier.doi10.1209/0295-5075/118/17001
dc.identifier.rcubConv_3752
dc.identifier.scopus2-s2.0-85020809737
dc.identifier.wos000405277800018
dc.type.versionpublishedVersion


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