Spin- and valley-polarized transport through ferromagnetic and antiferromagnetic barriers on monolayer MoS2
Abstract
We study ballistic electron transport through single or double barriers on monolayer MoS2, of width d, in the presence of a ferromagnetic field Moran antiferromagnetic field F. The total conductance,gc, its spin-up and spin-down components, and the polarization oscillate with d or the distance b between two barriers. The corresponding oscillation periods are different. The conductance g(c) versus M decreases in a fluctuating manner with a steep decline at certain value of M. As a function of M the spin polarization P-s oscillates before it becomes 100% while the valley polarization 13, oscillates and steadily increases.
Keywords:
Quantum transport / Low dimensional physics / NanostructuresSource:
Physica E-Low-Dimensional Systems & Nanostructures, 2016, 75, 317-321Publisher:
- Elsevier Science Bv, Amsterdam
Projects:
- Micro- Nanosystems and Sensors for Electric Power and Process Industry and Environmental Protection (RS-32008)
- Canadian NSERC - OGP0121756
DOI: 10.1016/j.physe.2015.10.003
ISSN: 1386-9477