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dc.creatorNešić, Dušan
dc.date.accessioned2019-01-30T17:12:44Z
dc.date.available2019-01-30T17:12:44Z
dc.date.issued2005
dc.identifier.isbn0-7803-9164-0
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/178
dc.description.abstractIn this paper a new type of lambda/4 attenuator on silicon substrate is simulated, fabricated and measured. A lambda/4 open microstrip stub is realized as an EBG (or PBG) cell. Reduction of the central attenuator frequency of the realized structures is about 35% comparing to the conventional case.en
dc.rightsrestrictedAccess
dc.sourceTelsiks 2005, Proceedings, Vols 1 and 2
dc.subjectmicrostripen
dc.subjectEBG (or PBG)en
dc.subjectsiliconen
dc.subjectmicrostrip
dc.subjectEBG (or PBG)
dc.subjectsilicon
dc.subjectMicrowave theory and techniques
dc.titleMicrostrip attenuator on silicon substrate with a compact EBG (or PBG) cellen
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractНешић, Душан;
dc.citation.spage443
dc.citation.epage444
dc.citation.other: 443-444
dc.identifier.doi10.1109/TELSKS.2005.1572147
dc.identifier.rcubConv_2345
dc.identifier.wos000233336900093
dc.type.versionpublishedVersion


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