Temperature measurement performance of silicon piezoresistive MEMS pressure sensors for industrial applications

2015
Authors
Frantlović, Miloš
Jokić, Ivana

Lazić, Žarko

Vukelić, Branko

Obradov, Marko

Vasiljević-Radović, Dana

Stanković, Srđan
Article (Published version)

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Show full item recordAbstract
Temperature and pressure are the most common parameters to be measured and monitored not only in industrial processes but in many other fields from vehicles and healthcare to household appliances. Silicon microelectromechanical (MEMS) piezoresistive pressure sensors are the first and the most successful MEMS sensors, offering high sensitivity, solid-state reliability and small dimensions at a low cost achieved by mass production. The inherent temperature dependence of the output signal of such sensors adversely affects their pressure measurement performance, necessitating the use of correction methods in a majority of cases. However, the same effect can be utilized for temperature measurement, thus enabling new sensor applications. In this paper we perform characterization of MEMS piezoresistive pressure sensors for temperature measurement, propose a sensor correction method, and demonstrate that the measurement error as low as ± 0.3 °C can be achieved.
Keywords:
MEMS sensor / temperature measurement / sensor correctionSource:
Facta universitatis - series: Electronics and Energetics, 2015, 28, 1, 123-131Publisher:
- Univerzitet u Nišu
Funding / projects:
- Micro- Nanosystems and Sensors for Electric Power and Process Industry and Environmental Protection (RS-32008)
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IHTMTY - JOUR AU - Frantlović, Miloš AU - Jokić, Ivana AU - Lazić, Žarko AU - Vukelić, Branko AU - Obradov, Marko AU - Vasiljević-Radović, Dana AU - Stanković, Srđan PY - 2015 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/1714 AB - Temperature and pressure are the most common parameters to be measured and monitored not only in industrial processes but in many other fields from vehicles and healthcare to household appliances. Silicon microelectromechanical (MEMS) piezoresistive pressure sensors are the first and the most successful MEMS sensors, offering high sensitivity, solid-state reliability and small dimensions at a low cost achieved by mass production. The inherent temperature dependence of the output signal of such sensors adversely affects their pressure measurement performance, necessitating the use of correction methods in a majority of cases. However, the same effect can be utilized for temperature measurement, thus enabling new sensor applications. In this paper we perform characterization of MEMS piezoresistive pressure sensors for temperature measurement, propose a sensor correction method, and demonstrate that the measurement error as low as ± 0.3 °C can be achieved. PB - Univerzitet u Nišu T2 - Facta universitatis - series: Electronics and Energetics T1 - Temperature measurement performance of silicon piezoresistive MEMS pressure sensors for industrial applications VL - 28 IS - 1 SP - 123 EP - 131 DO - 10.2298/FUEE1501123F ER -
@article{ author = "Frantlović, Miloš and Jokić, Ivana and Lazić, Žarko and Vukelić, Branko and Obradov, Marko and Vasiljević-Radović, Dana and Stanković, Srđan", year = "2015", abstract = "Temperature and pressure are the most common parameters to be measured and monitored not only in industrial processes but in many other fields from vehicles and healthcare to household appliances. Silicon microelectromechanical (MEMS) piezoresistive pressure sensors are the first and the most successful MEMS sensors, offering high sensitivity, solid-state reliability and small dimensions at a low cost achieved by mass production. The inherent temperature dependence of the output signal of such sensors adversely affects their pressure measurement performance, necessitating the use of correction methods in a majority of cases. However, the same effect can be utilized for temperature measurement, thus enabling new sensor applications. In this paper we perform characterization of MEMS piezoresistive pressure sensors for temperature measurement, propose a sensor correction method, and demonstrate that the measurement error as low as ± 0.3 °C can be achieved.", publisher = "Univerzitet u Nišu", journal = "Facta universitatis - series: Electronics and Energetics", title = "Temperature measurement performance of silicon piezoresistive MEMS pressure sensors for industrial applications", volume = "28", number = "1", pages = "123-131", doi = "10.2298/FUEE1501123F" }
Frantlović, M., Jokić, I., Lazić, Ž., Vukelić, B., Obradov, M., Vasiljević-Radović, D.,& Stanković, S.. (2015). Temperature measurement performance of silicon piezoresistive MEMS pressure sensors for industrial applications. in Facta universitatis - series: Electronics and Energetics Univerzitet u Nišu., 28(1), 123-131. https://doi.org/10.2298/FUEE1501123F
Frantlović M, Jokić I, Lazić Ž, Vukelić B, Obradov M, Vasiljević-Radović D, Stanković S. Temperature measurement performance of silicon piezoresistive MEMS pressure sensors for industrial applications. in Facta universitatis - series: Electronics and Energetics. 2015;28(1):123-131. doi:10.2298/FUEE1501123F .
Frantlović, Miloš, Jokić, Ivana, Lazić, Žarko, Vukelić, Branko, Obradov, Marko, Vasiljević-Radović, Dana, Stanković, Srđan, "Temperature measurement performance of silicon piezoresistive MEMS pressure sensors for industrial applications" in Facta universitatis - series: Electronics and Energetics, 28, no. 1 (2015):123-131, https://doi.org/10.2298/FUEE1501123F . .