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Temperature measurement performance of silicon piezoresistive MEMS pressure sensors for industrial applications

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2015
1712.pdf (637.5Kb)
Authors
Frantlović, Miloš
Jokić, Ivana
Lazić, Žarko
Vukelić, Branko
Obradov, Marko
Vasiljević-Radović, Dana
Stanković, Srđan
Article (Published version)
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Abstract
Temperature and pressure are the most common parameters to be measured and monitored not only in industrial processes but in many other fields from vehicles and healthcare to household appliances. Silicon microelectromechanical (MEMS) piezoresistive pressure sensors are the first and the most successful MEMS sensors, offering high sensitivity, solid-state reliability and small dimensions at a low cost achieved by mass production. The inherent temperature dependence of the output signal of such sensors adversely affects their pressure measurement performance, necessitating the use of correction methods in a majority of cases. However, the same effect can be utilized for temperature measurement, thus enabling new sensor applications. In this paper we perform characterization of MEMS piezoresistive pressure sensors for temperature measurement, propose a sensor correction method, and demonstrate that the measurement error as low as ± 0.3 °C can be achieved.
Keywords:
MEMS sensor / temperature measurement / sensor correction
Source:
Facta universitatis - series: Electronics and Energetics, 2015, 28, 1, 123-131
Publisher:
  • Univerzitet u Nišu
Projects:
  • Micro- Nanosystems and Sensors for Electric Power and Process Industry and Environmental Protection (RS-32008)

DOI: 10.2298/FUEE1501123F

ISSN: 0353-3670

WoS: 000421919300009

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URI
http://cer.ihtm.bg.ac.rs/handle/123456789/1714
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