Приказ основних података о документу

dc.creatorGomidlelovic, L
dc.creatorŽivković, Dragana
dc.creatorTalijan, Nadežda M.
dc.creatorĆosović, Vladan
dc.creatorBalanović, Ljubiša
dc.creatorPozega, E
dc.creatorMitovski, A
dc.creatorMarjanovic, B
dc.date.accessioned2019-01-30T17:45:18Z
dc.date.available2019-01-30T17:45:18Z
dc.date.issued2015
dc.identifier.issn1842-6573
dc.identifier.urihttps://cer.ihtm.bg.ac.rs/handle/123456789/1709
dc.description.abstractThe materials based on gallium-antimonide are widely used in electronic industry in the production of various electronic devices. The results of characterization of selected alloys in the Ga-InSb system obtained by experimental investigation of some thermal, structural, mechanical and electrical properties are presented in this paper. Applied experimental techniques included: differential thermal analysis, light optical microscopy, scanning electron microscopy with EDX, hardness, micro hardness and electrical conductivity measurements.en
dc.publisherNational Institute of Optoelectronics
dc.relationinfo:eu-repo/grantAgreement/MESTD/Basic Research (BR or ON)/172037/RS//
dc.rightsopenAccess
dc.sourceOptoelectronics and Advanced Materials, Rapid Communications
dc.subjectGa-In-Sb alloysen
dc.subjectDTAen
dc.subjectSEM-EDXen
dc.subjectHardnessen
dc.subjectMicro hardnessen
dc.subjectElectrical conductivityen
dc.titleCharacterization of the Ga-InSb system: experimental investigation of thermal, structural, mechanical and electrical propertiesen
dc.typearticle
dc.rights.licenseARR
dc.citation.volume9
dc.citation.issue7-8
dc.citation.spage965
dc.citation.epage968
dc.citation.other9(7-8): 965-968
dc.citation.rankM23
dc.identifier.rcubhttps://hdl.handle.net/21.15107/rcub_cer_1709
dc.identifier.fulltexthttps://cer.ihtm.bg.ac.rs/bitstream/id/15226/gomidzelovic20151.pdf
dc.identifier.scopus2-s2.0-84938404162
dc.identifier.wos000359967500013
dc.type.versionpublishedVersion


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Приказ основних података о документу