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dc.creatorJović, Vesna
dc.creatorLamovec, Jelena
dc.creatorMladenović, Ivana
dc.creatorSmiljanić, Milče
dc.creatorPopović, Bogdan
dc.date.accessioned2019-01-30T17:39:53Z
dc.date.available2019-01-30T17:39:53Z
dc.date.issued2014
dc.identifier.issn2159-1660
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/1451
dc.description.abstractThis paper presents microcantilever fabrication on {100} oriented Si substrate using bulk micromachining technique. Detailed characteristics of convex corner compensation design for {100} oriented beam for two etching solutions: 25 wt. % TMAH and 30 wt. % KOH water solutions at 80 degrees C are given.en
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relationinfo:eu-repo/grantAgreement/MESTD/Technological Development (TD or TR)/32008/RS//
dc.rightsrestrictedAccess
dc.sourceProceedings of the International Conference on Microelectronics, ICM
dc.titlePrevention of Convex Corner Undercutting in Fabrication of Silicon Microcantilevers by Wet Anisotropic Etchingen
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractПоповић, Богдан; Младеновић, Ивана; Смиљанић, Милче; Јовић, Весна; Ламовец, Јелена;
dc.citation.spage163
dc.citation.epage166
dc.citation.other: 163-166
dc.identifier.doi10.1109/MIEL.2014.6842111
dc.identifier.rcubConv_3404
dc.identifier.scopus2-s2.0-84904704435
dc.identifier.wos000360788600031
dc.type.versionpublishedVersion


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