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dc.creatorLazić, Žarko
dc.creatorSmiljanić, Milče
dc.creatorRašljić, Milena
dc.date.accessioned2019-01-30T17:39:51Z
dc.date.available2019-01-30T17:39:51Z
dc.date.issued2014
dc.identifier.issn2159-1660
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/1449
dc.description.abstractIn this work we present the not so commonly use of RF sputtered silicon as a masking layer for glass wet etching. The main advantages of this technique are low deposition temperature of silicon layer compared to PECVD and LPCVD processes, simplicity to use and low cost. Si layers were sputtered on 2.5x2.5cm(2) Pyrex 7740 substrates. The measured thickness of deposited silicon layer was 2.2 mu m. Silicon layer was patterned using lift-off technique. Etching was done in undilluted HF (49%) with estimated etch rate of similar to 8 mu m/min. Good quality of the glass surface without pinholes and notch defects on the glass etched edges suggests that using sp-Si layer as a masking material for glass etching is feasible.en
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.rightsrestrictedAccess
dc.sourceProceedings of the International Conference on Microelectronics, ICM
dc.titleGlass Micromachining with Sputtered Silicon as a Masking Layeren
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractРашљић, Милена; Лазић, Жарко; Смиљанић, Милче;
dc.citation.spage175
dc.citation.epage178
dc.citation.other: 175-178
dc.identifier.doi10.1109/MIEL.2014.6842114
dc.identifier.rcubConv_3405
dc.identifier.scopus2-s2.0-84904689658
dc.identifier.wos000360788600034
dc.type.versionpublishedVersion


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