In this work we present the not so commonly use of RF sputtered silicon as a masking layer for glass wet etching. The main advantages of this technique are low deposition temperature of silicon layer compared to PECVD and LPCVD processes, simplicity to use and low cost. Si layers were sputtered on 2.5x2.5cm(2) Pyrex 7740 substrates. The measured thickness of deposited silicon layer was 2.2 mu m. Silicon layer was patterned using lift-off technique. Etching was done in undilluted HF (49%) with estimated etch rate of similar to 8 mu m/min. Good quality of the glass surface without pinholes and notch defects on the glass etched edges suggests that using sp-Si layer as a masking material for glass etching is feasible.
Source:
Proceedings of the International Conference on Microelectronics, ICM, 2014, 175-178
Publisher:
Institute of Electrical and Electronics Engineers Inc.
TY - CONF
AU - Lazić, Žarko
AU - Smiljanić, Milče
AU - Rašljić, Milena
PY - 2014
UR - http://cer.ihtm.bg.ac.rs/handle/123456789/1449
AB - In this work we present the not so commonly use of RF sputtered silicon as a masking layer for glass wet etching. The main advantages of this technique are low deposition temperature of silicon layer compared to PECVD and LPCVD processes, simplicity to use and low cost. Si layers were sputtered on 2.5x2.5cm(2) Pyrex 7740 substrates. The measured thickness of deposited silicon layer was 2.2 mu m. Silicon layer was patterned using lift-off technique. Etching was done in undilluted HF (49%) with estimated etch rate of similar to 8 mu m/min. Good quality of the glass surface without pinholes and notch defects on the glass etched edges suggests that using sp-Si layer as a masking material for glass etching is feasible.
PB - Institute of Electrical and Electronics Engineers Inc.
C3 - Proceedings of the International Conference on Microelectronics, ICM
T1 - Glass Micromachining with Sputtered Silicon as a Masking Layer
SP - 175
EP - 178
DO - 10.1109/MIEL.2014.6842114
ER -
@conference{
author = "Lazić, Žarko and Smiljanić, Milče and Rašljić, Milena",
year = "2014",
url = "http://cer.ihtm.bg.ac.rs/handle/123456789/1449",
abstract = "In this work we present the not so commonly use of RF sputtered silicon as a masking layer for glass wet etching. The main advantages of this technique are low deposition temperature of silicon layer compared to PECVD and LPCVD processes, simplicity to use and low cost. Si layers were sputtered on 2.5x2.5cm(2) Pyrex 7740 substrates. The measured thickness of deposited silicon layer was 2.2 mu m. Silicon layer was patterned using lift-off technique. Etching was done in undilluted HF (49%) with estimated etch rate of similar to 8 mu m/min. Good quality of the glass surface without pinholes and notch defects on the glass etched edges suggests that using sp-Si layer as a masking material for glass etching is feasible.",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
journal = "Proceedings of the International Conference on Microelectronics, ICM",
title = "Glass Micromachining with Sputtered Silicon as a Masking Layer",
pages = "175-178",
doi = "10.1109/MIEL.2014.6842114"
}
Lazić, Ž., Smiljanić, M.,& Rašljić, M. (2014). Glass Micromachining with Sputtered Silicon as a Masking Layer.
Proceedings of the International Conference on Microelectronics, ICM
Institute of Electrical and Electronics Engineers Inc.., 175-178.
https://doi.org/10.1109/MIEL.2014.6842114
Lazić Ž, Smiljanić M, Rašljić M. Glass Micromachining with Sputtered Silicon as a Masking Layer. Proceedings of the International Conference on Microelectronics, ICM. 2014;:175-178
Lazić Žarko, Smiljanić Milče, Rašljić Milena, "Glass Micromachining with Sputtered Silicon as a Masking Layer" Proceedings of the International Conference on Microelectronics, ICM (2014):175-178,
https://doi.org/10.1109/MIEL.2014.6842114 .
