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dc.creatorSmiljanić, Milče
dc.creatorRadjenovic, Branislav
dc.creatorRadmilović-Radjenović, Marija
dc.creatorLazić, Žarko
dc.creatorJović, Vesna
dc.date.accessioned2019-01-30T17:39:25Z
dc.date.available2019-01-30T17:39:25Z
dc.date.issued2014
dc.identifier.issn0960-1317
dc.identifier.urihttps://cer.ihtm.bg.ac.rs/handle/123456789/1426
dc.description.abstractMaskless etching with convex corner compensation in the form of a LT 100 > oriented beam is investigated using both experiments and simulations. The maskless convex corner compensation technique is defined as a combination of masked and maskless anisotropic etching of {1 0 0} silicon in 25 wt% TMAH water solution at a temperature of 80 degrees C. This technique enables fabrication of three-level micromachined silicon structures with compensated convex corners at the bottom of the etched structure. All crystallographic planes that appear during etching are determined and their etch rates are used to calculate the etch rate value in an arbitrary crystallographic direction necessary for simulation by an interpolation procedure. A 3D simulation of the profile evolution of the etched structure during masked and maskless etching of silicon based on the level set method is presented. All crystallographic planes of the etched silicon structures determined in the experiment are recognized in the corresponding simulated etching profiles obtained by the level set method.en
dc.publisherIop Publishing Ltd, Bristol
dc.relationinfo:eu-repo/grantAgreement/MESTD/Technological Development (TD or TR)/32008/RS//
dc.relationinfo:eu-repo/grantAgreement/MESTD/Basic Research (BR or ON)/171037/RS//
dc.rightsrestrictedAccess
dc.sourceJournal of Micromechanics and Microengineering
dc.subjectsimulationen
dc.subjectlevel set methoden
dc.subjectmaskless wet etchingen
dc.subjectTMAHen
dc.subjectsilicon crystallographic planesen
dc.titleSimulation and experimental study of maskless convex corner compensation in TMAH water solutionen
dc.typearticle
dc.rights.licenseARR
dcterms.abstractРадјеновиц, Бранислав; Смиљанић, Милче; Јовић, Весна; Радмиловиц-Радјеновиц, Марија; Лазић, Жарко;
dc.citation.volume24
dc.citation.issue11
dc.citation.other24(11):
dc.citation.rankM22
dc.identifier.doi10.1088/0960-1317/24/11/115003
dc.identifier.scopus2-s2.0-84914680395
dc.identifier.wos000345262800003
dc.type.versionpublishedVersion


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