The aim of this work is the development of photoacoustic (PA) method for the measurement and determination of parametres of thin films (with a thickness of less than 1 mu m). Experimental study of the optical, thermal, and elastic characteristics of the thin film on Si substrate by PA elastic bending method was given. Thin film-semiconductor (Si) sample is modeled by simultaneous analysis of the plasma, thermal, and elastic wave equations. Two normalization procedures of the PA elastic bending signal in function of the modulation frequency of the optical excitation were established. The experimental PA elastic bending signals were measured and analysed. Without loss of generality, the TiO2 thin film (with a thickness of 0.5 mu m) on Si substrate (circular plate) was experimentaly studied. We have studied the PA elastic bending signals in order to obtain the values of optical, thermal, and elastic parameters of TiO2 film. The analysis shows that it is possible to develop noncontact and ...nondestructive experimental method-PA elastic bending method for thin film study, with possibility to obtain the optical, thermal, and elastic parameters of the film thinner than 1 mu m.
TY - JOUR
AU - Todorović, D. M.
AU - Rabasovic, M D
AU - Markushev, D D
AU - Sarajlić, Milija
PY - 2014
UR - http://cer.ihtm.bg.ac.rs/handle/123456789/1422
AB - The aim of this work is the development of photoacoustic (PA) method for the measurement and determination of parametres of thin films (with a thickness of less than 1 mu m). Experimental study of the optical, thermal, and elastic characteristics of the thin film on Si substrate by PA elastic bending method was given. Thin film-semiconductor (Si) sample is modeled by simultaneous analysis of the plasma, thermal, and elastic wave equations. Two normalization procedures of the PA elastic bending signal in function of the modulation frequency of the optical excitation were established. The experimental PA elastic bending signals were measured and analysed. Without loss of generality, the TiO2 thin film (with a thickness of 0.5 mu m) on Si substrate (circular plate) was experimentaly studied. We have studied the PA elastic bending signals in order to obtain the values of optical, thermal, and elastic parameters of TiO2 film. The analysis shows that it is possible to develop noncontact and nondestructive experimental method-PA elastic bending method for thin film study, with possibility to obtain the optical, thermal, and elastic parameters of the film thinner than 1 mu m.
PB - Amer Inst Physics, Melville
T2 - Journal of Applied Physics
T1 - Photoacoustic elastic bending in thin film-substrate system: Experimental determination of the thin film parameters
VL - 116
IS - 5
DO - 10.1063/1.4890346
ER -
@article{
author = "Todorović, D. M. and Rabasovic, M D and Markushev, D D and Sarajlić, Milija",
year = "2014",
url = "http://cer.ihtm.bg.ac.rs/handle/123456789/1422",
abstract = "The aim of this work is the development of photoacoustic (PA) method for the measurement and determination of parametres of thin films (with a thickness of less than 1 mu m). Experimental study of the optical, thermal, and elastic characteristics of the thin film on Si substrate by PA elastic bending method was given. Thin film-semiconductor (Si) sample is modeled by simultaneous analysis of the plasma, thermal, and elastic wave equations. Two normalization procedures of the PA elastic bending signal in function of the modulation frequency of the optical excitation were established. The experimental PA elastic bending signals were measured and analysed. Without loss of generality, the TiO2 thin film (with a thickness of 0.5 mu m) on Si substrate (circular plate) was experimentaly studied. We have studied the PA elastic bending signals in order to obtain the values of optical, thermal, and elastic parameters of TiO2 film. The analysis shows that it is possible to develop noncontact and nondestructive experimental method-PA elastic bending method for thin film study, with possibility to obtain the optical, thermal, and elastic parameters of the film thinner than 1 mu m.",
publisher = "Amer Inst Physics, Melville",
journal = "Journal of Applied Physics",
title = "Photoacoustic elastic bending in thin film-substrate system: Experimental determination of the thin film parameters",
volume = "116",
number = "5",
doi = "10.1063/1.4890346"
}
Todorović DM, Rabasovic MD, Markushev DD, Sarajlić M. Photoacoustic elastic bending in thin film-substrate system: Experimental determination of the thin film parameters. Journal of Applied Physics. 2014;116(5)
Todorović, D. M., Rabasovic, M. D., Markushev, D. D.,& Sarajlić, M. (2014). Photoacoustic elastic bending in thin film-substrate system: Experimental determination of the thin film parameters.
Journal of Applied PhysicsAmer Inst Physics, Melville., 116(5).
https://doi.org/10.1063/1.4890346
Todorović D. M., Rabasovic M D, Markushev D D, Sarajlić Milija, "Photoacoustic elastic bending in thin film-substrate system: Experimental determination of the thin film parameters" 116, no. 5 (2014),
https://doi.org/10.1063/1.4890346 .
