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Integer quantum Hall effect in gapped single-layer graphene

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2012
1129.pdf (543.4Kb)
Authors
Krstajić, Predrag
Vasilopoulos, Panagiotis
Article (Published version)
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Abstract
Analytical expressions for the Hall conductivity sigma(yx) and the longitudinal resistivity rho(xx) are derived in gapped, single-layer graphene using linear response theory. The gap 2 Delta, described by a mass term, is induced by a substrate made of hexagonal boron nitride (h-BN) and produces two levels at +/-Delta. It is shown that syx has the same form as for a graphene sample supported by a common substrate without a mass term. The differences are a shift in the energy spectrum, which is not symmetric with respect to the Dirac point for either valley due to the gap, the absence of a zero-energy Landau level, and the nonequivalence of the K and K' valleys. In addition, the dispersion of the energy levels, caused by electron scattering by impurities, modifies mostly plateaus due to the levels at +/-Delta. It is shown that the resistivity rho(xx) exhibits an oscillatory dependence on the electron concentration. The main difference with the usual graphene samples, on SiO2 substrates, ...occurs near zero concentration, as the energy spectra differ mostly near the Dirac point.

Source:
Physical Review B, 2012, 86, 11
Publisher:
  • Amer Physical Soc, College Pk
Funding / projects:
  • Micro- Nanosystems and Sensors for Electric Power and Process Industry and Environmental Protection (RS-32008)
  • Canadian NSERC - OGP0121756

DOI: 10.1103/PhysRevB.86.115432

ISSN: 1098-0121

WoS: 000309173300005

Scopus: 2-s2.0-84867019296
[ Google Scholar ]
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URI
https://cer.ihtm.bg.ac.rs/handle/123456789/1131
Collections
  • Radovi istraživača / Researchers' publications
Institution/Community
IHTM
TY  - JOUR
AU  - Krstajić, Predrag
AU  - Vasilopoulos, Panagiotis
PY  - 2012
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/1131
AB  - Analytical expressions for the Hall conductivity sigma(yx) and the longitudinal resistivity rho(xx) are derived in gapped, single-layer graphene using linear response theory. The gap 2 Delta, described by a mass term, is induced by a substrate made of hexagonal boron nitride (h-BN) and produces two levels at +/-Delta. It is shown that syx has the same form as for a graphene sample supported by a common substrate without a mass term. The differences are a shift in the energy spectrum, which is not symmetric with respect to the Dirac point for either valley due to the gap, the absence of a zero-energy Landau level, and the nonequivalence of the K and K' valleys. In addition, the dispersion of the energy levels, caused by electron scattering by impurities, modifies mostly plateaus due to the levels at +/-Delta. It is shown that the resistivity rho(xx) exhibits an oscillatory dependence on the electron concentration. The main difference with the usual graphene samples, on SiO2 substrates, occurs near zero concentration, as the energy spectra differ mostly near the Dirac point.
PB  - Amer Physical Soc, College Pk
T2  - Physical Review B
T1  - Integer quantum Hall effect in gapped single-layer graphene
VL  - 86
IS  - 11
DO  - 10.1103/PhysRevB.86.115432
ER  - 
@article{
author = "Krstajić, Predrag and Vasilopoulos, Panagiotis",
year = "2012",
abstract = "Analytical expressions for the Hall conductivity sigma(yx) and the longitudinal resistivity rho(xx) are derived in gapped, single-layer graphene using linear response theory. The gap 2 Delta, described by a mass term, is induced by a substrate made of hexagonal boron nitride (h-BN) and produces two levels at +/-Delta. It is shown that syx has the same form as for a graphene sample supported by a common substrate without a mass term. The differences are a shift in the energy spectrum, which is not symmetric with respect to the Dirac point for either valley due to the gap, the absence of a zero-energy Landau level, and the nonequivalence of the K and K' valleys. In addition, the dispersion of the energy levels, caused by electron scattering by impurities, modifies mostly plateaus due to the levels at +/-Delta. It is shown that the resistivity rho(xx) exhibits an oscillatory dependence on the electron concentration. The main difference with the usual graphene samples, on SiO2 substrates, occurs near zero concentration, as the energy spectra differ mostly near the Dirac point.",
publisher = "Amer Physical Soc, College Pk",
journal = "Physical Review B",
title = "Integer quantum Hall effect in gapped single-layer graphene",
volume = "86",
number = "11",
doi = "10.1103/PhysRevB.86.115432"
}
Krstajić, P.,& Vasilopoulos, P.. (2012). Integer quantum Hall effect in gapped single-layer graphene. in Physical Review B
Amer Physical Soc, College Pk., 86(11).
https://doi.org/10.1103/PhysRevB.86.115432
Krstajić P, Vasilopoulos P. Integer quantum Hall effect in gapped single-layer graphene. in Physical Review B. 2012;86(11).
doi:10.1103/PhysRevB.86.115432 .
Krstajić, Predrag, Vasilopoulos, Panagiotis, "Integer quantum Hall effect in gapped single-layer graphene" in Physical Review B, 86, no. 11 (2012),
https://doi.org/10.1103/PhysRevB.86.115432 . .

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