Maskless convex corner compensation technique on a (100) silicon substrate in a 25 wt% TMAH water solution
Abstract
A maskless convex corner compensation technique in a 25 wt% TMAH water solution at the temperature of 80 degrees C is presented and analyzed. The maskless convex corner compensation technique is defined as a combination of masked and maskless anisotropic etching with convex corner compensation in the form of a LT 1 0 0 > oriented beam. This technique enables the fabrication of three-level micromachined silicon structures with compensated convex corner at the bottom of the etched structure. All the planes that appear during the etching of (1 0 0) silicon in the 25 wt% TMAH water solution at the temperature of 80 degrees C are determined. Analytical relations have been found to explain the etching of all exposed planes and to calculate their etch rates. Analytical relations are determined and empirically verified in order to obtain regular shapes of the three-level silicon mesa structures. A boss for a low-pressure piezoresistive sensor has been fabricated as an example of the maskless... convex corner compensation technique.
Source:
Journal of Micromechanics and Microengineering, 2012, 22, 11Publisher:
- Iop Publishing Ltd, Bristol
Funding / projects:
- Micro- Nanosystems and Sensors for Electric Power and Process Industry and Environmental Protection (RS-32008)
DOI: 10.1088/0960-1317/22/11/115011
ISSN: 0960-1317
WoS: 000310534400012
Scopus: 2-s2.0-84867921846
Collections
Institution/Community
IHTMTY - JOUR AU - Smiljanić, Milče AU - Jović, Vesna AU - Lazić, Žarko PY - 2012 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/1118 AB - A maskless convex corner compensation technique in a 25 wt% TMAH water solution at the temperature of 80 degrees C is presented and analyzed. The maskless convex corner compensation technique is defined as a combination of masked and maskless anisotropic etching with convex corner compensation in the form of a LT 1 0 0 > oriented beam. This technique enables the fabrication of three-level micromachined silicon structures with compensated convex corner at the bottom of the etched structure. All the planes that appear during the etching of (1 0 0) silicon in the 25 wt% TMAH water solution at the temperature of 80 degrees C are determined. Analytical relations have been found to explain the etching of all exposed planes and to calculate their etch rates. Analytical relations are determined and empirically verified in order to obtain regular shapes of the three-level silicon mesa structures. A boss for a low-pressure piezoresistive sensor has been fabricated as an example of the maskless convex corner compensation technique. PB - Iop Publishing Ltd, Bristol T2 - Journal of Micromechanics and Microengineering T1 - Maskless convex corner compensation technique on a (100) silicon substrate in a 25 wt% TMAH water solution VL - 22 IS - 11 DO - 10.1088/0960-1317/22/11/115011 ER -
@article{ author = "Smiljanić, Milče and Jović, Vesna and Lazić, Žarko", year = "2012", abstract = "A maskless convex corner compensation technique in a 25 wt% TMAH water solution at the temperature of 80 degrees C is presented and analyzed. The maskless convex corner compensation technique is defined as a combination of masked and maskless anisotropic etching with convex corner compensation in the form of a LT 1 0 0 > oriented beam. This technique enables the fabrication of three-level micromachined silicon structures with compensated convex corner at the bottom of the etched structure. All the planes that appear during the etching of (1 0 0) silicon in the 25 wt% TMAH water solution at the temperature of 80 degrees C are determined. Analytical relations have been found to explain the etching of all exposed planes and to calculate their etch rates. Analytical relations are determined and empirically verified in order to obtain regular shapes of the three-level silicon mesa structures. A boss for a low-pressure piezoresistive sensor has been fabricated as an example of the maskless convex corner compensation technique.", publisher = "Iop Publishing Ltd, Bristol", journal = "Journal of Micromechanics and Microengineering", title = "Maskless convex corner compensation technique on a (100) silicon substrate in a 25 wt% TMAH water solution", volume = "22", number = "11", doi = "10.1088/0960-1317/22/11/115011" }
Smiljanić, M., Jović, V.,& Lazić, Ž.. (2012). Maskless convex corner compensation technique on a (100) silicon substrate in a 25 wt% TMAH water solution. in Journal of Micromechanics and Microengineering Iop Publishing Ltd, Bristol., 22(11). https://doi.org/10.1088/0960-1317/22/11/115011
Smiljanić M, Jović V, Lazić Ž. Maskless convex corner compensation technique on a (100) silicon substrate in a 25 wt% TMAH water solution. in Journal of Micromechanics and Microengineering. 2012;22(11). doi:10.1088/0960-1317/22/11/115011 .
Smiljanić, Milče, Jović, Vesna, Lazić, Žarko, "Maskless convex corner compensation technique on a (100) silicon substrate in a 25 wt% TMAH water solution" in Journal of Micromechanics and Microengineering, 22, no. 11 (2012), https://doi.org/10.1088/0960-1317/22/11/115011 . .