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Maskless convex corner compensation technique on a (100) silicon substrate in a 25 wt% TMAH water solution

Authorized Users Only
2012
Authors
Smiljanić, Milče
Jović, Vesna
Lazić, Žarko
Article (Published version)
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Abstract
A maskless convex corner compensation technique in a 25 wt% TMAH water solution at the temperature of 80 degrees C is presented and analyzed. The maskless convex corner compensation technique is defined as a combination of masked and maskless anisotropic etching with convex corner compensation in the form of a LT 1 0 0 > oriented beam. This technique enables the fabrication of three-level micromachined silicon structures with compensated convex corner at the bottom of the etched structure. All the planes that appear during the etching of (1 0 0) silicon in the 25 wt% TMAH water solution at the temperature of 80 degrees C are determined. Analytical relations have been found to explain the etching of all exposed planes and to calculate their etch rates. Analytical relations are determined and empirically verified in order to obtain regular shapes of the three-level silicon mesa structures. A boss for a low-pressure piezoresistive sensor has been fabricated as an example of the maskless... convex corner compensation technique.

Source:
Journal of Micromechanics and Microengineering, 2012, 22, 11
Publisher:
  • Iop Publishing Ltd, Bristol
Funding / projects:
  • Micro- Nanosystems and Sensors for Electric Power and Process Industry and Environmental Protection (RS-32008)

DOI: 10.1088/0960-1317/22/11/115011

ISSN: 0960-1317

WoS: 000310534400012

Scopus: 2-s2.0-84867921846
[ Google Scholar ]
18
17
URI
https://cer.ihtm.bg.ac.rs/handle/123456789/1118
Collections
  • Radovi istraživača / Researchers' publications
Institution/Community
IHTM
TY  - JOUR
AU  - Smiljanić, Milče
AU  - Jović, Vesna
AU  - Lazić, Žarko
PY  - 2012
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/1118
AB  - A maskless convex corner compensation technique in a 25 wt% TMAH water solution at the temperature of 80 degrees C is presented and analyzed. The maskless convex corner compensation technique is defined as a combination of masked and maskless anisotropic etching with convex corner compensation in the form of a  LT  1 0 0 > oriented beam. This technique enables the fabrication of three-level micromachined silicon structures with compensated convex corner at the bottom of the etched structure. All the planes that appear during the etching of (1 0 0) silicon in the 25 wt% TMAH water solution at the temperature of 80 degrees C are determined. Analytical relations have been found to explain the etching of all exposed planes and to calculate their etch rates. Analytical relations are determined and empirically verified in order to obtain regular shapes of the three-level silicon mesa structures. A boss for a low-pressure piezoresistive sensor has been fabricated as an example of the maskless convex corner compensation technique.
PB  - Iop Publishing Ltd, Bristol
T2  - Journal of Micromechanics and Microengineering
T1  - Maskless convex corner compensation technique on a (100) silicon substrate in a 25 wt% TMAH water solution
VL  - 22
IS  - 11
DO  - 10.1088/0960-1317/22/11/115011
ER  - 
@article{
author = "Smiljanić, Milče and Jović, Vesna and Lazić, Žarko",
year = "2012",
abstract = "A maskless convex corner compensation technique in a 25 wt% TMAH water solution at the temperature of 80 degrees C is presented and analyzed. The maskless convex corner compensation technique is defined as a combination of masked and maskless anisotropic etching with convex corner compensation in the form of a  LT  1 0 0 > oriented beam. This technique enables the fabrication of three-level micromachined silicon structures with compensated convex corner at the bottom of the etched structure. All the planes that appear during the etching of (1 0 0) silicon in the 25 wt% TMAH water solution at the temperature of 80 degrees C are determined. Analytical relations have been found to explain the etching of all exposed planes and to calculate their etch rates. Analytical relations are determined and empirically verified in order to obtain regular shapes of the three-level silicon mesa structures. A boss for a low-pressure piezoresistive sensor has been fabricated as an example of the maskless convex corner compensation technique.",
publisher = "Iop Publishing Ltd, Bristol",
journal = "Journal of Micromechanics and Microengineering",
title = "Maskless convex corner compensation technique on a (100) silicon substrate in a 25 wt% TMAH water solution",
volume = "22",
number = "11",
doi = "10.1088/0960-1317/22/11/115011"
}
Smiljanić, M., Jović, V.,& Lazić, Ž.. (2012). Maskless convex corner compensation technique on a (100) silicon substrate in a 25 wt% TMAH water solution. in Journal of Micromechanics and Microengineering
Iop Publishing Ltd, Bristol., 22(11).
https://doi.org/10.1088/0960-1317/22/11/115011
Smiljanić M, Jović V, Lazić Ž. Maskless convex corner compensation technique on a (100) silicon substrate in a 25 wt% TMAH water solution. in Journal of Micromechanics and Microengineering. 2012;22(11).
doi:10.1088/0960-1317/22/11/115011 .
Smiljanić, Milče, Jović, Vesna, Lazić, Žarko, "Maskless convex corner compensation technique on a (100) silicon substrate in a 25 wt% TMAH water solution" in Journal of Micromechanics and Microengineering, 22, no. 11 (2012),
https://doi.org/10.1088/0960-1317/22/11/115011 . .

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