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dc.creatorNešić, Dušan
dc.creatorJokić, Ivana
dc.creatorFrantlović, Miloš
dc.date.accessioned2019-01-30T17:32:35Z
dc.date.available2019-01-30T17:32:35Z
dc.date.issued2012
dc.identifier.issn2159-1660
dc.identifier.urihttps://cer.ihtm.bg.ac.rs/handle/123456789/1103
dc.description.abstractWide band-stop filter on high-resistivity silicon (HRS) is introduced. The starting point is an ideal circuit model with ideal waveguides. The filter is simulated in microstrip technology and compared with the ideal model. The structure is adjusted to the conditions of silicon and technological boundaries.en
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/205533/EU//
dc.relationinfo:eu-repo/grantAgreement/MESTD/Technological Development (TD or TR)/32008/RS//
dc.rightsrestrictedAccess
dc.source28th International Conference on Microelectronics - Proceedings, MIEL 2012
dc.titleSimulation of a Wide Band-stop Filter on High-resistivity Silicon (HRS) Substrateen
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractНешић, Душан; Франтловић, Милош; Јокић, Ивана;
dc.citation.spage281
dc.citation.epage283
dc.citation.other: 281-283
dc.identifier.doi10.1109/MIEL.2012.6222854
dc.identifier.scopus2-s2.0-84864193513
dc.identifier.wos000309119600059
dc.type.versionpublishedVersion


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