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dc.creatorJović, Vesna
dc.creatorSmiljanić, Milče
dc.creatorLamovec, Jelena
dc.creatorPopović, M.
dc.date.accessioned2019-01-30T17:32:27Z
dc.date.available2019-01-30T17:32:27Z
dc.date.issued2012
dc.identifier.issn2159-1660
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/1098
dc.description.abstractStep-like structures oriented along LT 110 > or LT 110 > directions on {100} oriented Si substrates are first etched with mask following maskless etching in 30 wt. % KOH solution in water at 80 degrees C. The step structures investigated by maskless etching are convex prismatic edges bounded by {100} and {111} planes for LT 110 > oriented steps or only {100} planes for LT 110 > oriented steps. Experimental results are used to verify the nature of {hkl} cutting planes that are developed at the convex corners of the steps during maskless anisotropic etching. From analytical relations and experimental results, the ratio between the etching rates for the {hkl} (fast-etching plane at the edge step) and {100} planes is found for both step orientations.en
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relationinfo:eu-repo/grantAgreement/MESTD/Technological Development (TD or TR)/32008/RS//
dc.relationEuropean Commission 7th Framework Programme through the project Regmina, grant 205533
dc.rightsrestrictedAccess
dc.source28th International Conference on Microelectronics - Proceedings, MIEL 2012
dc.titleMicrofabrication by Mask-maskless wet Anisotropic Etching for Realization of Multilevel Structures in {100} Oriented Sien
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractЈовић, Весна; Ламовец, Јелена; Смиљанић, Милче; Поповиц, М.;
dc.citation.spage139
dc.citation.epage142
dc.citation.other: 139-142
dc.identifier.doi10.1109/MIEL.2012.6222817
dc.identifier.rcubConv_2851
dc.identifier.scopus2-s2.0-84864230506
dc.identifier.wos000309119600027
dc.type.versionpublishedVersion


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