Microfabrication by Mask-maskless wet Anisotropic Etching for Realization of Multilevel Structures in {100} Oriented Si
Abstract
Step-like structures oriented along LT 110 > or LT 110 > directions on {100} oriented Si substrates are first etched with mask following maskless etching in 30 wt. % KOH solution in water at 80 degrees C. The step structures investigated by maskless etching are convex prismatic edges bounded by {100} and {111} planes for LT 110 > oriented steps or only {100} planes for LT 110 > oriented steps. Experimental results are used to verify the nature of {hkl} cutting planes that are developed at the convex corners of the steps during maskless anisotropic etching. From analytical relations and experimental results, the ratio between the etching rates for the {hkl} (fast-etching plane at the edge step) and {100} planes is found for both step orientations.
Source:
28th International Conference on Microelectronics - Proceedings, MIEL 2012, 2012, 139-142Publisher:
- Institute of Electrical and Electronics Engineers Inc.
Projects:
- Micro- Nanosystems and Sensors for Electric Power and Process Industry and Environmental Protection (RS-32008)
- European Commission 7th Framework Programme through the project Regmina, grant 205533
DOI: 10.1109/MIEL.2012.6222817
ISSN: 2159-1660