Microfabrication by Mask-maskless wet Anisotropic Etching for Realization of Multilevel Structures in {100} Oriented Si
Abstract
Step-like structures oriented along LT 110 > or LT 110 > directions on {100} oriented Si substrates are first etched with mask following maskless etching in 30 wt. % KOH solution in water at 80 degrees C. The step structures investigated by maskless etching are convex prismatic edges bounded by {100} and {111} planes for LT 110 > oriented steps or only {100} planes for LT 110 > oriented steps. Experimental results are used to verify the nature of {hkl} cutting planes that are developed at the convex corners of the steps during maskless anisotropic etching. From analytical relations and experimental results, the ratio between the etching rates for the {hkl} (fast-etching plane at the edge step) and {100} planes is found for both step orientations.
Source:
28th International Conference on Microelectronics - Proceedings, MIEL 2012, 2012, 139-142Publisher:
- Institute of Electrical and Electronics Engineers Inc.
Funding / projects:
- Micro- Nanosystems and Sensors for Electric Power and Process Industry and Environmental Protection (RS-32008)
- European Commission 7th Framework Programme through the project Regmina, grant 205533
DOI: 10.1109/MIEL.2012.6222817
ISSN: 2159-1660
WoS: 000309119600027
Scopus: 2-s2.0-84864230506
Collections
Institution/Community
IHTMTY - CONF AU - Jović, Vesna AU - Smiljanić, Milče AU - Lamovec, Jelena AU - Popović, M. PY - 2012 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/1098 AB - Step-like structures oriented along LT 110 > or LT 110 > directions on {100} oriented Si substrates are first etched with mask following maskless etching in 30 wt. % KOH solution in water at 80 degrees C. The step structures investigated by maskless etching are convex prismatic edges bounded by {100} and {111} planes for LT 110 > oriented steps or only {100} planes for LT 110 > oriented steps. Experimental results are used to verify the nature of {hkl} cutting planes that are developed at the convex corners of the steps during maskless anisotropic etching. From analytical relations and experimental results, the ratio between the etching rates for the {hkl} (fast-etching plane at the edge step) and {100} planes is found for both step orientations. PB - Institute of Electrical and Electronics Engineers Inc. C3 - 28th International Conference on Microelectronics - Proceedings, MIEL 2012 T1 - Microfabrication by Mask-maskless wet Anisotropic Etching for Realization of Multilevel Structures in {100} Oriented Si SP - 139 EP - 142 DO - 10.1109/MIEL.2012.6222817 ER -
@conference{ author = "Jović, Vesna and Smiljanić, Milče and Lamovec, Jelena and Popović, M.", year = "2012", abstract = "Step-like structures oriented along LT 110 > or LT 110 > directions on {100} oriented Si substrates are first etched with mask following maskless etching in 30 wt. % KOH solution in water at 80 degrees C. The step structures investigated by maskless etching are convex prismatic edges bounded by {100} and {111} planes for LT 110 > oriented steps or only {100} planes for LT 110 > oriented steps. Experimental results are used to verify the nature of {hkl} cutting planes that are developed at the convex corners of the steps during maskless anisotropic etching. From analytical relations and experimental results, the ratio between the etching rates for the {hkl} (fast-etching plane at the edge step) and {100} planes is found for both step orientations.", publisher = "Institute of Electrical and Electronics Engineers Inc.", journal = "28th International Conference on Microelectronics - Proceedings, MIEL 2012", title = "Microfabrication by Mask-maskless wet Anisotropic Etching for Realization of Multilevel Structures in {100} Oriented Si", pages = "139-142", doi = "10.1109/MIEL.2012.6222817" }
Jović, V., Smiljanić, M., Lamovec, J.,& Popović, M.. (2012). Microfabrication by Mask-maskless wet Anisotropic Etching for Realization of Multilevel Structures in {100} Oriented Si. in 28th International Conference on Microelectronics - Proceedings, MIEL 2012 Institute of Electrical and Electronics Engineers Inc.., 139-142. https://doi.org/10.1109/MIEL.2012.6222817
Jović V, Smiljanić M, Lamovec J, Popović M. Microfabrication by Mask-maskless wet Anisotropic Etching for Realization of Multilevel Structures in {100} Oriented Si. in 28th International Conference on Microelectronics - Proceedings, MIEL 2012. 2012;:139-142. doi:10.1109/MIEL.2012.6222817 .
Jović, Vesna, Smiljanić, Milče, Lamovec, Jelena, Popović, M., "Microfabrication by Mask-maskless wet Anisotropic Etching for Realization of Multilevel Structures in {100} Oriented Si" in 28th International Conference on Microelectronics - Proceedings, MIEL 2012 (2012):139-142, https://doi.org/10.1109/MIEL.2012.6222817 . .