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dc.creatorNešić, Dušan
dc.creatorJokić, Ivana
dc.creatorFrantlović, Miloš
dc.creatorSarajlić, Milija
dc.date.accessioned2019-01-30T17:32:02Z
dc.date.available2019-01-30T17:32:02Z
dc.date.issued2012
dc.identifier.issn0352-9045
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/1080
dc.description.abstractLow-resistivity silicon (standard CMOS-grade silicon) is a troublesome issue for the microwave passive components. One solution is using high-resistivity silicon (HRS). Wide band-stop filter on high-resistivity silicon (HRS), 5 k Omega-cm, is introduced. The filter is simulated and successfully fabricated in microstrip technology. Relative stop band width is over 70 % for 20 dB suppression. Reflection, S11, in the pass band is -17 dB or lower. Metallization was sputterd aluminum (Al) and silver epoxy was used for bonding.en
dc.publisherSoc Microelectronics, Electron Components Materials-Midem, Ljubljjana
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/205533/EU//
dc.relationinfo:eu-repo/grantAgreement/MESTD/Technological Development (TD or TR)/32008/RS//
dc.rightsrestrictedAccess
dc.sourceInformacije Midem-Journal of Microelectronics Electronic Components and Materials
dc.subjectMicrowaveen
dc.subjectHigh-resistivity silicon (HRS)en
dc.subjectBand-stop filteren
dc.subjectSputtered aluminum (Al)en
dc.titleWide Band-stop Microwave Microstrip Filter on High-resistivity Siliconen
dc.typearticle
dc.rights.licenseARR
dcterms.abstractСарајлић, Милија; Јокић, Ивана; Франтловић, Милош; Нешић, Душан;
dc.citation.volume42
dc.citation.issue4
dc.citation.spage282
dc.citation.epage286
dc.citation.other42(4): 282-286
dc.citation.rankM23
dc.identifier.rcubConv_2938
dc.identifier.scopus2-s2.0-84876971901
dc.identifier.wos000315953900009
dc.type.versionpublishedVersion


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