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dc.creatorNikolic, P. M.
dc.creatorParaskevopoulos, Konstantinos M.
dc.creatorZachariadis, G.
dc.creatorValasiadis, O.
dc.creatorZorba, T. T.
dc.creatorVujatovic, S. S.
dc.creatorNikolic, N.
dc.creatorAleksić, Obrad S.
dc.creatorIvetic, T.
dc.creatorCvetković, Olga
dc.creatorBlagojevic, V.
dc.creatorNikolić, Maria Vesna
dc.date.accessioned2019-01-30T17:30:28Z
dc.date.available2019-01-30T17:30:28Z
dc.date.issued2012
dc.identifier.issn0022-2461
dc.identifier.urihttps://cer.ihtm.bg.ac.rs/handle/123456789/1007
dc.description.abstractPbTe single crystals, doped with B, were grown using the Bridgman method. Far infrared spectra were measured in the temperature range between 10 K and room temperature. The experimental spectra were numerically analyzed, and optical parameters were calculated. Local impurity modes of boron were observed at about 150 and 240 cm(-1). For all samples, after FIR measurements, the content of boron was measured using inductively coupled plasma atomic emission spectrometry. Optical mobility of free carriers was calculated and it was the highest for the sample with only 0.014 at.% of boron in PbTe. A negative photoconductivity effect at 130 K for PbTe + B was also observed.en
dc.publisherSpringer, New York
dc.relationinfo:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45014/RS//
dc.rightsrestrictedAccess
dc.sourceJournal of Materials Science
dc.titleFar infrared study of local impurity modes of Boron-doped PbTeen
dc.typearticle
dc.rights.licenseARR
dcterms.abstractВујатовиц, С. С.; Николиц, П. М.; Параскевопоулос, К. М.; Зорба, Т. Т.; Николиц, Н.; Иветиц, Т.; Зацхариадис, Г.; Валасиадис, О.; Благојевиц, В.; Цветковић, Олга; Aлексић, Обрад С.; Николић, Мариа Весна;
dc.citation.volume47
dc.citation.issue5
dc.citation.spage2384
dc.citation.epage2389
dc.citation.other47(5): 2384-2389
dc.citation.rankM21
dc.identifier.doi10.1007/s10853-011-6057-8
dc.identifier.scopus2-s2.0-84857647432
dc.identifier.wos000299081500045
dc.type.versionpublishedVersion


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