TY  - JOUR
AU  - Đurić, Zoran
AU  - Jakšić, Zoran
AU  - Randjelović, Danijela
AU  - Danković, Tatjana
AU  - Wolfgang, Ehrfeld
AU  - Schmidt, Andreas
PY  - 1999
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/6838
AB  - Abstract
In this work we present a structure consisting of a semiconductor sample immersed between two one-dimensional photonic crystals, designed with the aim to investigate the possibility to increase radiative lifetime in infrared photodetectors, i.e., to decrease the background radiation limit. Since we used a HgCdTe detector for the detection of CO2 laser radiation, we formed a defect in the front-side photonic crystal with the transmission peak on 10.6 mm. Our numerical calculations show that the 1-D photonic crystal structures at the front and at the back side of the semiconductor sample significantly increase the radiative lifetime in the photodetector.
PB  - Elsevier
T2  - Infrared Physics and Technology
T1  - Enhancement of radiative lifetime in semiconductors using photonic crystals
VL  - 40
IS  - 1
SP  - 25
EP  - 32
DO  - 10.1016/S1350-4495(98)00039-5
ER  - 

@article{
author = "Đurić, Zoran and Jakšić, Zoran and Randjelović, Danijela and Danković, Tatjana and Wolfgang, Ehrfeld and Schmidt, Andreas",
year = "1999",
abstract = "Abstract
In this work we present a structure consisting of a semiconductor sample immersed between two one-dimensional photonic crystals, designed with the aim to investigate the possibility to increase radiative lifetime in infrared photodetectors, i.e., to decrease the background radiation limit. Since we used a HgCdTe detector for the detection of CO2 laser radiation, we formed a defect in the front-side photonic crystal with the transmission peak on 10.6 mm. Our numerical calculations show that the 1-D photonic crystal structures at the front and at the back side of the semiconductor sample significantly increase the radiative lifetime in the photodetector.",
publisher = "Elsevier",
journal = "Infrared Physics and Technology",
title = "Enhancement of radiative lifetime in semiconductors using photonic crystals",
volume = "40",
number = "1",
pages = "25-32",
doi = "10.1016/S1350-4495(98)00039-5"
}

Đurić, Z., Jakšić, Z., Randjelović, D., Danković, T., Wolfgang, E.,& Schmidt, A.. (1999). Enhancement of radiative lifetime in semiconductors using photonic crystals. in Infrared Physics and Technology
Elsevier., 40(1), 25-32.
https://doi.org/10.1016/S1350-4495(98)00039-5

Đurić Z, Jakšić Z, Randjelović D, Danković T, Wolfgang E, Schmidt A. Enhancement of radiative lifetime in semiconductors using photonic crystals. in Infrared Physics and Technology. 1999;40(1):25-32.
doi:10.1016/S1350-4495(98)00039-5 .

Đurić, Zoran, Jakšić, Zoran, Randjelović, Danijela, Danković, Tatjana, Wolfgang, Ehrfeld, Schmidt, Andreas, "Enhancement of radiative lifetime in semiconductors using photonic crystals" in Infrared Physics and Technology, 40, no. 1 (1999):25-32,
https://doi.org/10.1016/S1350-4495(98)00039-5 . .

TY  - CONF
AU  - Đurić, Zoran
AU  - Dankovic, Tatjana
AU  - Jakšić, Zoran
AU  - Randjelović, Danijela
AU  - Petrovic, Radomir
AU  - Wolfgang, Ehrfeld
AU  - Schmidt, Andreas
AU  - Hecker, Klaus
PY  - 1999
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/6840
AB  - Abstract
In this paper we propose a silicon UV flame detector for combustion systems. In gas burners the relative intensity of flame radiation is dominant in the ultraviolet region (below 0.35 μm). In the visible and infrared regions the relative intensity of radiation of the incandescent surfaces (black body) is several orders of magnitude greater than the gas flame radiation intensity. Therefore it is required that the flame detector has a much greater sensitivity in the ultraviolet region. The proposed detector is formed on n-type silicon on isolator wafer. In order to suppress sensitivity in the visible and the IR regions, the absorption region of the detector is greatly reduced, and a UV filter utilizing photonic crystal is designed. The p-n junctions are formed by very shallow diffusion of impurities. The contacts are made after the deposition of a thin oxide layer. The UV filter is then sputtered on the detector surface. The filter consists of a thin silver film (protected by MgF2), and a one-dimensional photonic crystal made of twelve pairs of NaF/Y2O3 layers. The photonic band gaps of the crystal should suppress the propagation of the light with wavelengths greater than 0.35 μm. For the detector active area of 5 mm2, the thickness of the silver layer of 0.13 μm and a dark current of 1 nA, the noise equivalent power at 0.32 μm is 4.23·10-13W/Hz1/2. The calculated flame signal to total signal ratio is 0.52.
PB  - Society of Photo-Optical Instrumentation Engineers
C3  - Proceedings of SPIE - The International Society for Optical Engineering, Proceedings of the 1999 Design, Test, and Microfabrication of MEMS and MOEMS
T1  - Silicon UV flame detector utilizing photonic crystal
VL  - 3680
IS  - II
SP  - 601
EP  - 610
DO  - 10.1117/12.341251
ER  - 

@conference{
author = "Đurić, Zoran and Dankovic, Tatjana and Jakšić, Zoran and Randjelović, Danijela and Petrovic, Radomir and Wolfgang, Ehrfeld and Schmidt, Andreas and Hecker, Klaus",
year = "1999",
abstract = "Abstract
In this paper we propose a silicon UV flame detector for combustion systems. In gas burners the relative intensity of flame radiation is dominant in the ultraviolet region (below 0.35 μm). In the visible and infrared regions the relative intensity of radiation of the incandescent surfaces (black body) is several orders of magnitude greater than the gas flame radiation intensity. Therefore it is required that the flame detector has a much greater sensitivity in the ultraviolet region. The proposed detector is formed on n-type silicon on isolator wafer. In order to suppress sensitivity in the visible and the IR regions, the absorption region of the detector is greatly reduced, and a UV filter utilizing photonic crystal is designed. The p-n junctions are formed by very shallow diffusion of impurities. The contacts are made after the deposition of a thin oxide layer. The UV filter is then sputtered on the detector surface. The filter consists of a thin silver film (protected by MgF2), and a one-dimensional photonic crystal made of twelve pairs of NaF/Y2O3 layers. The photonic band gaps of the crystal should suppress the propagation of the light with wavelengths greater than 0.35 μm. For the detector active area of 5 mm2, the thickness of the silver layer of 0.13 μm and a dark current of 1 nA, the noise equivalent power at 0.32 μm is 4.23·10-13W/Hz1/2. The calculated flame signal to total signal ratio is 0.52.",
publisher = "Society of Photo-Optical Instrumentation Engineers",
journal = "Proceedings of SPIE - The International Society for Optical Engineering, Proceedings of the 1999 Design, Test, and Microfabrication of MEMS and MOEMS",
title = "Silicon UV flame detector utilizing photonic crystal",
volume = "3680",
number = "II",
pages = "601-610",
doi = "10.1117/12.341251"
}

Đurić, Z., Dankovic, T., Jakšić, Z., Randjelović, D., Petrovic, R., Wolfgang, E., Schmidt, A.,& Hecker, K.. (1999). Silicon UV flame detector utilizing photonic crystal. in Proceedings of SPIE - The International Society for Optical Engineering, Proceedings of the 1999 Design, Test, and Microfabrication of MEMS and MOEMS
Society of Photo-Optical Instrumentation Engineers., 3680(II), 601-610.
https://doi.org/10.1117/12.341251

Đurić Z, Dankovic T, Jakšić Z, Randjelović D, Petrovic R, Wolfgang E, Schmidt A, Hecker K. Silicon UV flame detector utilizing photonic crystal. in Proceedings of SPIE - The International Society for Optical Engineering, Proceedings of the 1999 Design, Test, and Microfabrication of MEMS and MOEMS. 1999;3680(II):601-610.
doi:10.1117/12.341251 .

Đurić, Zoran, Dankovic, Tatjana, Jakšić, Zoran, Randjelović, Danijela, Petrovic, Radomir, Wolfgang, Ehrfeld, Schmidt, Andreas, Hecker, Klaus, "Silicon UV flame detector utilizing photonic crystal" in Proceedings of SPIE - The International Society for Optical Engineering, Proceedings of the 1999 Design, Test, and Microfabrication of MEMS and MOEMS, 3680, no. II (1999):601-610,
https://doi.org/10.1117/12.341251 . .

TY  - CONF
AU  - Jakšić, Zoran
AU  - Petrović, Radomir
AU  - Randjelović, Danijela
AU  - Danković, Tatjana
AU  - Đurić, Zoran
AU  - Ehrfeld, Wolfgang
AU  - Schmidt, Andreas
AU  - Hecker, Klaus
PY  - 1999
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/6864
AB  - Abstract
We propose a single-chip multicolor photodetector for (3-5) μm range based on a linear IR semiconductor detector array with an integrated 1-D photonic bandgap (PBG) filter. A wedge-shaped defect slab (corresponding to a Fizeau-type interferometer) is introduced into the filter instead of one of the layers. The bandgap of the photonic crystal coincides with the spectral sensitivity range of the photodetector array, while the built-in defect gives a transmission peak within the same range. The defect thickness varies along the array length and thus shifts the transmission peak wavelength. The optimized photonic bandgap filter including defect is designed using the transfer matrix method. The peak frequency is tuned by choosing the geometrical parameters of the wedge-shaped defect. In our experiments, thin alternating Si and SiO2 films are sputtered onto the array surface, thus forming a 1-D PBG structure. The defect is fabricated by gradually changing the middle Si layer thickness over the width of the array. Its wedge-forming is performed by micromachining or, alternatively, by in-situ oblique deposition within the sputtering system and, possibly, subsequent chemomechanical polishing. The characteristics of the finished PBG structure are measured using an IR spectrophotometer. An increase of the number of PBG layers improves the confinement of transmission peaks and thus decreases the crosstalk between the array elements. Although our multicolor detector is designed for the (3-5) μm atmospheric window, it can be straightforwardly redesigned for any other optical range.
PB  - Society of Photo-Optical Instrumentation Engineers (SPIE)
C3  - Proceedings of SPIE - The International Society for Optical Engineering, Proceedings of the 1999 Design, Test, and Microfabrication of MEMS and MOEMS
T1  - Integrated multicolor detector utilizing 1-D photonic bandgap filter with wedge-shaped defect
VL  - 3680
IS  - II
SP  - 611
EP  - 619
DO  - 10.1117/12.341252
ER  - 

@conference{
author = "Jakšić, Zoran and Petrović, Radomir and Randjelović, Danijela and Danković, Tatjana and Đurić, Zoran and Ehrfeld, Wolfgang and Schmidt, Andreas and Hecker, Klaus",
year = "1999",
abstract = "Abstract
We propose a single-chip multicolor photodetector for (3-5) μm range based on a linear IR semiconductor detector array with an integrated 1-D photonic bandgap (PBG) filter. A wedge-shaped defect slab (corresponding to a Fizeau-type interferometer) is introduced into the filter instead of one of the layers. The bandgap of the photonic crystal coincides with the spectral sensitivity range of the photodetector array, while the built-in defect gives a transmission peak within the same range. The defect thickness varies along the array length and thus shifts the transmission peak wavelength. The optimized photonic bandgap filter including defect is designed using the transfer matrix method. The peak frequency is tuned by choosing the geometrical parameters of the wedge-shaped defect. In our experiments, thin alternating Si and SiO2 films are sputtered onto the array surface, thus forming a 1-D PBG structure. The defect is fabricated by gradually changing the middle Si layer thickness over the width of the array. Its wedge-forming is performed by micromachining or, alternatively, by in-situ oblique deposition within the sputtering system and, possibly, subsequent chemomechanical polishing. The characteristics of the finished PBG structure are measured using an IR spectrophotometer. An increase of the number of PBG layers improves the confinement of transmission peaks and thus decreases the crosstalk between the array elements. Although our multicolor detector is designed for the (3-5) μm atmospheric window, it can be straightforwardly redesigned for any other optical range.",
publisher = "Society of Photo-Optical Instrumentation Engineers (SPIE)",
journal = "Proceedings of SPIE - The International Society for Optical Engineering, Proceedings of the 1999 Design, Test, and Microfabrication of MEMS and MOEMS",
title = "Integrated multicolor detector utilizing 1-D photonic bandgap filter with wedge-shaped defect",
volume = "3680",
number = "II",
pages = "611-619",
doi = "10.1117/12.341252"
}

Jakšić, Z., Petrović, R., Randjelović, D., Danković, T., Đurić, Z., Ehrfeld, W., Schmidt, A.,& Hecker, K.. (1999). Integrated multicolor detector utilizing 1-D photonic bandgap filter with wedge-shaped defect. in Proceedings of SPIE - The International Society for Optical Engineering, Proceedings of the 1999 Design, Test, and Microfabrication of MEMS and MOEMS
Society of Photo-Optical Instrumentation Engineers (SPIE)., 3680(II), 611-619.
https://doi.org/10.1117/12.341252

Jakšić Z, Petrović R, Randjelović D, Danković T, Đurić Z, Ehrfeld W, Schmidt A, Hecker K. Integrated multicolor detector utilizing 1-D photonic bandgap filter with wedge-shaped defect. in Proceedings of SPIE - The International Society for Optical Engineering, Proceedings of the 1999 Design, Test, and Microfabrication of MEMS and MOEMS. 1999;3680(II):611-619.
doi:10.1117/12.341252 .

Jakšić, Zoran, Petrović, Radomir, Randjelović, Danijela, Danković, Tatjana, Đurić, Zoran, Ehrfeld, Wolfgang, Schmidt, Andreas, Hecker, Klaus, "Integrated multicolor detector utilizing 1-D photonic bandgap filter with wedge-shaped defect" in Proceedings of SPIE - The International Society for Optical Engineering, Proceedings of the 1999 Design, Test, and Microfabrication of MEMS and MOEMS, 3680, no. II (1999):611-619,
https://doi.org/10.1117/12.341252 . .

TY  - CONF
AU  - Đurić, Zoran
AU  - Petrović, Radomir
AU  - Randjelović, Danijela
AU  - Danković, Tatjana
AU  - Jakšić, Zoran
AU  - Ehrfeld, Wolfgang
AU  - Feiertag, Georg
AU  - Freimuth, H.
PY  - 1997
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/6863
AB  - Abstract
Based on our detailed theoretical analysis we fabricated 1D Si/SiO2 photonic crystals with donor and acceptor defects. We observed their photonic band-gaps and defect modes by measuring the infrared transmission of the samples. We propose here the application of this type of structures for enhancement of InSb photodetector detectivity.
PB  - Institute of Electrical and Electronics Engineers (IEEE)
C3  - Proceedings - 21st International Conference on Microelectronics MIEL 97, 14-17 September 1997, Niš, Serbia
T1  - One dimensional Si-SiO2 photonic crystal with defects intended for use in infrared spectral region
VL  - 1
SP  - 99
EP  - 102
DO  - 10.1109/ICMEL.1997.625190
ER  - 

@conference{
author = "Đurić, Zoran and Petrović, Radomir and Randjelović, Danijela and Danković, Tatjana and Jakšić, Zoran and Ehrfeld, Wolfgang and Feiertag, Georg and Freimuth, H.",
year = "1997",
abstract = "Abstract
Based on our detailed theoretical analysis we fabricated 1D Si/SiO2 photonic crystals with donor and acceptor defects. We observed their photonic band-gaps and defect modes by measuring the infrared transmission of the samples. We propose here the application of this type of structures for enhancement of InSb photodetector detectivity.",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
journal = "Proceedings - 21st International Conference on Microelectronics MIEL 97, 14-17 September 1997, Niš, Serbia",
title = "One dimensional Si-SiO2 photonic crystal with defects intended for use in infrared spectral region",
volume = "1",
pages = "99-102",
doi = "10.1109/ICMEL.1997.625190"
}

Đurić, Z., Petrović, R., Randjelović, D., Danković, T., Jakšić, Z., Ehrfeld, W., Feiertag, G.,& Freimuth, H.. (1997). One dimensional Si-SiO2 photonic crystal with defects intended for use in infrared spectral region. in Proceedings - 21st International Conference on Microelectronics MIEL 97, 14-17 September 1997, Niš, Serbia
Institute of Electrical and Electronics Engineers (IEEE)., 1, 99-102.
https://doi.org/10.1109/ICMEL.1997.625190

Đurić Z, Petrović R, Randjelović D, Danković T, Jakšić Z, Ehrfeld W, Feiertag G, Freimuth H. One dimensional Si-SiO2 photonic crystal with defects intended for use in infrared spectral region. in Proceedings - 21st International Conference on Microelectronics MIEL 97, 14-17 September 1997, Niš, Serbia. 1997;1:99-102.
doi:10.1109/ICMEL.1997.625190 .

Đurić, Zoran, Petrović, Radomir, Randjelović, Danijela, Danković, Tatjana, Jakšić, Zoran, Ehrfeld, Wolfgang, Feiertag, Georg, Freimuth, H., "One dimensional Si-SiO2 photonic crystal with defects intended for use in infrared spectral region" in Proceedings - 21st International Conference on Microelectronics MIEL 97, 14-17 September 1997, Niš, Serbia, 1 (1997):99-102,
https://doi.org/10.1109/ICMEL.1997.625190 . .