TY  - JOUR
AU  - Đurić, Zoran G.
AU  - Smiljanić, Miloljub
AU  - Tjapkin, D.
PY  - 1975
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3075
AB  - It is shown that the reciprocal value of low frequency capacitance of a MISIM structure can be represented by a sum of reciprocal values of insulator layer and surface space charge capacitances and an “interaction” term which is a consequence of the finiteness of the semiconductor layer. General formulae are derived for the low frequency capacitance of a MISIM structure with nondegenerate semiconductor. Analytical and numerical calculations are given for a MISIM structure with intrinsic semiconductor layer.
PB  - Elsevier
T2  - Solid-State Electronics
T1  - Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance
VL  - 18
IS  - 10
SP  - 827
EP  - 831
DO  - 10.1016/0038-1101(75)90002-7
ER  - 

@article{
author = "Đurić, Zoran G. and Smiljanić, Miloljub and Tjapkin, D.",
year = "1975",
abstract = "It is shown that the reciprocal value of low frequency capacitance of a MISIM structure can be represented by a sum of reciprocal values of insulator layer and surface space charge capacitances and an “interaction” term which is a consequence of the finiteness of the semiconductor layer. General formulae are derived for the low frequency capacitance of a MISIM structure with nondegenerate semiconductor. Analytical and numerical calculations are given for a MISIM structure with intrinsic semiconductor layer.",
publisher = "Elsevier",
journal = "Solid-State Electronics",
title = "Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance",
volume = "18",
number = "10",
pages = "827-831",
doi = "10.1016/0038-1101(75)90002-7"
}

Đurić, Z. G., Smiljanić, M.,& Tjapkin, D.. (1975). Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance. in Solid-State Electronics
Elsevier., 18(10), 827-831.
https://doi.org/10.1016/0038-1101(75)90002-7

Đurić ZG, Smiljanić M, Tjapkin D. Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance. in Solid-State Electronics. 1975;18(10):827-831.
doi:10.1016/0038-1101(75)90002-7 .

Đurić, Zoran G., Smiljanić, Miloljub, Tjapkin, D., "Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance" in Solid-State Electronics, 18, no. 10 (1975):827-831,
https://doi.org/10.1016/0038-1101(75)90002-7 . .

TY  - JOUR
AU  - Đurić, Zoran G.
AU  - Smiljanić, Miloljub
PY  - 1975
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3076
AB  - The static characteristics (potential and electric field distributions) of sandwich structures of a metal 1-insulator 1-nondegenerated semiconductor-insulator 2-metal 2 (M1I1S I2M2)-type are analyzed. A theory is given with help of which the semiconductor surface potentials ψ1 and ψ2 as a function of applied voltage, type and thickness of insulator and semiconductor layers, metal-semiconductor work function difference and effective density of surface charges, can be found.  Numerical calculations and diagrams with corresponding approximated analytical expressions are given for the case of a symmetrical MISIM structure with intrinsic semiconductor.
PB  - Elsevier
T2  - Solid-State Electronics
T1  - Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions
VL  - 18
IS  - 10
SP  - 817
EP  - 825
DO  - 10.1016/0038-1101(75)90001-5
ER  - 

@article{
author = "Đurić, Zoran G. and Smiljanić, Miloljub",
year = "1975",
abstract = "The static characteristics (potential and electric field distributions) of sandwich structures of a metal 1-insulator 1-nondegenerated semiconductor-insulator 2-metal 2 (M1I1S I2M2)-type are analyzed. A theory is given with help of which the semiconductor surface potentials ψ1 and ψ2 as a function of applied voltage, type and thickness of insulator and semiconductor layers, metal-semiconductor work function difference and effective density of surface charges, can be found.  Numerical calculations and diagrams with corresponding approximated analytical expressions are given for the case of a symmetrical MISIM structure with intrinsic semiconductor.",
publisher = "Elsevier",
journal = "Solid-State Electronics",
title = "Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions",
volume = "18",
number = "10",
pages = "817-825",
doi = "10.1016/0038-1101(75)90001-5"
}

Đurić, Z. G.,& Smiljanić, M.. (1975). Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions. in Solid-State Electronics
Elsevier., 18(10), 817-825.
https://doi.org/10.1016/0038-1101(75)90001-5

Đurić ZG, Smiljanić M. Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions. in Solid-State Electronics. 1975;18(10):817-825.
doi:10.1016/0038-1101(75)90001-5 .

Đurić, Zoran G., Smiljanić, Miloljub, "Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions" in Solid-State Electronics, 18, no. 10 (1975):817-825,
https://doi.org/10.1016/0038-1101(75)90001-5 . .