TY  - CONF
AU  - Jović, Vesna
AU  - Smiljanić, Milče
AU  - Lamovec, Jelena
AU  - Popović, M.
PY  - 2012
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/1098
AB  - Step-like structures oriented along  LT  110 > or  LT  110 > directions on {100} oriented Si substrates are first etched with mask following maskless etching in 30 wt. % KOH solution in water at 80 degrees C. The step structures investigated by maskless etching are convex prismatic edges bounded by {100} and {111} planes for  LT  110 > oriented steps or only {100} planes for  LT  110 > oriented steps. Experimental results are used to verify the nature of {hkl} cutting planes that are developed at the convex corners of the steps during maskless anisotropic etching. From analytical relations and experimental results, the ratio between the etching rates for the {hkl} (fast-etching plane at the edge step) and {100} planes is found for both step orientations.
PB  - Institute of Electrical and Electronics Engineers Inc.
C3  - 28th International Conference on Microelectronics - Proceedings, MIEL 2012
T1  - Microfabrication by Mask-maskless wet Anisotropic Etching for Realization of Multilevel Structures in {100} Oriented Si
SP  - 139
EP  - 142
DO  - 10.1109/MIEL.2012.6222817
ER  - 

@conference{
author = "Jović, Vesna and Smiljanić, Milče and Lamovec, Jelena and Popović, M.",
year = "2012",
abstract = "Step-like structures oriented along  LT  110 > or  LT  110 > directions on {100} oriented Si substrates are first etched with mask following maskless etching in 30 wt. % KOH solution in water at 80 degrees C. The step structures investigated by maskless etching are convex prismatic edges bounded by {100} and {111} planes for  LT  110 > oriented steps or only {100} planes for  LT  110 > oriented steps. Experimental results are used to verify the nature of {hkl} cutting planes that are developed at the convex corners of the steps during maskless anisotropic etching. From analytical relations and experimental results, the ratio between the etching rates for the {hkl} (fast-etching plane at the edge step) and {100} planes is found for both step orientations.",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
journal = "28th International Conference on Microelectronics - Proceedings, MIEL 2012",
title = "Microfabrication by Mask-maskless wet Anisotropic Etching for Realization of Multilevel Structures in {100} Oriented Si",
pages = "139-142",
doi = "10.1109/MIEL.2012.6222817"
}

Jović, V., Smiljanić, M., Lamovec, J.,& Popović, M.. (2012). Microfabrication by Mask-maskless wet Anisotropic Etching for Realization of Multilevel Structures in {100} Oriented Si. in 28th International Conference on Microelectronics - Proceedings, MIEL 2012
Institute of Electrical and Electronics Engineers Inc.., 139-142.
https://doi.org/10.1109/MIEL.2012.6222817

Jović V, Smiljanić M, Lamovec J, Popović M. Microfabrication by Mask-maskless wet Anisotropic Etching for Realization of Multilevel Structures in {100} Oriented Si. in 28th International Conference on Microelectronics - Proceedings, MIEL 2012. 2012;:139-142.
doi:10.1109/MIEL.2012.6222817 .

Jović, Vesna, Smiljanić, Milče, Lamovec, Jelena, Popović, M., "Microfabrication by Mask-maskless wet Anisotropic Etching for Realization of Multilevel Structures in {100} Oriented Si" in 28th International Conference on Microelectronics - Proceedings, MIEL 2012 (2012):139-142,
https://doi.org/10.1109/MIEL.2012.6222817 . .