TY  - JOUR
AU  - Smiljanić, Milče M.
AU  - Lazić, Žarko
AU  - Jović, Vesna
AU  - Radjenović, Branislav
AU  - Radmilović-Radjenović, Marija
PY  - 2020
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3490
AB  - This paper presents etching of convex corners with sides along <n10> and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of the parallelograms were designed along <n10> and <100> crystallographic directions (1 < n < 8). The acute corners of islands in the masking layer formed by <n10> and <100> crystallographic directions were smaller than 45°. All the crystallographic planes that appeared during etching in the experiment were determined. We found that the obtained types of 3D silicon shape sustain when n > 2. The convex corners were not distorted during etching. Therefore, no convex corner compensation is necessary. We fabricated three matrices of parallelograms with sides along crystallographic directions <310> and <100> as examples for possible applications. Additionally, the etching of matrices was simulated by the level set method. We obtained a good agreement between experiments and simulations.
PB  - MDPI
T2  - Micromachines
T1  - Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C
VL  - 11
IS  - 3
SP  - 253
DO  - 10.3390/mi11030253
ER  - 

@article{
author = "Smiljanić, Milče M. and Lazić, Žarko and Jović, Vesna and Radjenović, Branislav and Radmilović-Radjenović, Marija",
year = "2020",
abstract = "This paper presents etching of convex corners with sides along <n10> and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of the parallelograms were designed along <n10> and <100> crystallographic directions (1 < n < 8). The acute corners of islands in the masking layer formed by <n10> and <100> crystallographic directions were smaller than 45°. All the crystallographic planes that appeared during etching in the experiment were determined. We found that the obtained types of 3D silicon shape sustain when n > 2. The convex corners were not distorted during etching. Therefore, no convex corner compensation is necessary. We fabricated three matrices of parallelograms with sides along crystallographic directions <310> and <100> as examples for possible applications. Additionally, the etching of matrices was simulated by the level set method. We obtained a good agreement between experiments and simulations.",
publisher = "MDPI",
journal = "Micromachines",
title = "Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C",
volume = "11",
number = "3",
pages = "253",
doi = "10.3390/mi11030253"
}

Smiljanić, M. M., Lazić, Ž., Jović, V., Radjenović, B.,& Radmilović-Radjenović, M.. (2020). Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C. in Micromachines
MDPI., 11(3), 253.
https://doi.org/10.3390/mi11030253

Smiljanić MM, Lazić Ž, Jović V, Radjenović B, Radmilović-Radjenović M. Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C. in Micromachines. 2020;11(3):253.
doi:10.3390/mi11030253 .

Smiljanić, Milče M., Lazić, Žarko, Jović, Vesna, Radjenović, Branislav, Radmilović-Radjenović, Marija, "Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C" in Micromachines, 11, no. 3 (2020):253,
https://doi.org/10.3390/mi11030253 . .